New TIT capacitor with ZrO2/Al2O3/ZrO2 dielectrics for 60 nm and below DRAMs

Bibliographische Detailangaben

Veröffentlicht in:	Solid-state electronics 2007-11, Vol.51 (11-12), p.1529-1533
Hauptverfasser:	HO JIN CHO, YOUNG DAE KIM, YONG WOOK SONG, DONG SU PARK, LEE, Euna, CHEOL HWAN PARK, JUN SOO JANG, KEUM BUM LEE, HAI WON KIM, YOUNG JONG KI, HAN, Keun
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Dielectric, amorphous and glass solid devices Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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