Epitaxial growth of Al on (NH4)2Sx-treated GaAs

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Veröffentlicht in:	Japanese journal of applied physics 1990-04, Vol.29 (4), p.L544-L547
Hauptverfasser:	OIGAWA, H, JIA-FA FAN, NANNICHI, Y, KAWABE, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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subjects	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
title	Epitaxial growth of Al on (NH4)2Sx-treated GaAs
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