Initial stages of silicon homoepitaxy studied by in situ reflection electron microscopy
The conditions are determined of both, step‐layer growth and formation of two‐dimensional growth islands during homoepitaxy on the atomic clean (111) silicon surface by in situ reflection electron microscopy in ultrahigh vacuum. The intensity oscillations of reflection high energy electron diffracti...
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| Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1989-06, Vol.113 (2), p.421-430 |
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| container_end_page | 430 |
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| container_issue | 2 |
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| container_title | Physica status solidi. A, Applied research |
| container_volume | 113 |
| creator | Latyshev, A. V. Aseev, A. L. Krasilnikov, A. B. Stenin, S. I. |
| description | The conditions are determined of both, step‐layer growth and formation of two‐dimensional growth islands during homoepitaxy on the atomic clean (111) silicon surface by in situ reflection electron microscopy in ultrahigh vacuum. The intensity oscillations of reflection high energy electron diffraction (RHEED) are shown to be caused by periodic changes of the surface micromorphology due to the two‐dimensional islands growth. The analysis of individual monoatomic steps motion during homoepitaxy shows that the coefficient of the adatoms incorporation into the monoatomic step from the upper terrace is less than that from the lower terrace.
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| doi_str_mv | 10.1002/pssa.2211130220 |
| format | Article |
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| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Initial stages of silicon homoepitaxy studied by in situ reflection electron microscopy |
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