Influence of band structure and intrinsic carrier concentration on the THz surface emission from InN and InAs

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Veröffentlicht in:	Semiconductor science and technology 2007-09, Vol.22 (9), p.1016-1020
Hauptverfasser:	Polyakov, V M, Schwierz, F
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron and ion emission by liquids and solids impact phenomena Exact sciences and technology Impact phenomena (including electron spectra and sputtering) Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Laser-beam impact phenomena Physics
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