Hot Carrier and Negative-Bias Temperature Instability Reliabilities of Strained-Si MOSFETs

In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ioniz...

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Veröffentlicht in:	IEEE transactions on electron devices 2007-07, Vol.54 (7), p.1799-1803
Hauptverfasser:	LIU, Chuan-Hsi, PAN, Tung-Ming
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Buffers Bulk-Si carrier mobility Current carriers Degradation Density Devices Electronics Exact sciences and technology hot carrier (HC) Instability Interfaces MOSFETs negative bias temperature instability (NBTI) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stability strained-Si Transistors
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