Hot Carrier and Negative-Bias Temperature Instability Reliabilities of Strained-Si MOSFETs
In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ioniz...
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| Veröffentlicht in: | IEEE transactions on electron devices 2007-07, Vol.54 (7), p.1799-1803 |
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| container_end_page | 1803 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 54 |
| creator | LIU, Chuan-Hsi PAN, Tung-Ming |
| description | In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO2/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device. |
| doi_str_mv | 10.1109/TED.2007.898668 |
| format | Article |
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The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO2/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2007.898668</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Buffers ; Bulk-Si ; carrier mobility ; Current carriers ; Degradation ; Density ; Devices ; Electronics ; Exact sciences and technology ; hot carrier (HC) ; Instability ; Interfaces ; MOSFETs ; negative bias temperature instability (NBTI) ; Semiconductor electronics. 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The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO2/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.</description><subject>Applied sciences</subject><subject>Buffers</subject><subject>Bulk-Si</subject><subject>carrier mobility</subject><subject>Current carriers</subject><subject>Degradation</subject><subject>Density</subject><subject>Devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>hot carrier (HC)</subject><subject>Instability</subject><subject>Interfaces</subject><subject>MOSFETs</subject><subject>negative bias temperature instability (NBTI)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Stability</subject><subject>strained-Si</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkc2L1EAQxYMoOK6ePXhpBPWU2f6qdPdRx9VdWF1wxouXptKpSC-ZZOzOCPvf20MWBQ96qq9fPXi8qnou-FoI7s53F-_XknOzts42jX1QrQSAqV2jm4fVinNha6eselw9yfm2jI3WclV9u5xmtsGUIiWGY8c-03ec40-q30XMbEf7AyWcj4nY1ZhnbOMQ5zv2hYa49JEym3q2nRPGkbp6G9mnm-2Hi11-Wj3qccj07L6eVV_LenNZX998vNq8va6DNm6u-xYCSuW0RTQNBIBOtZxDJ2VLaIwhIwyCROKtEaA7Q4HbAAKsFNCjOqveLLqHNP04Up79PuZAw4AjTcfsHVeNLM7Nf0lrgCsAEIV8_U9Saa1AaSjgy7_A2-mYxuLX20YZ54Cf1M4XKKQp50S9P6S4x3TnBfen8HwJz5_C80t45ePVvSzmgEOfcAwx_3mzhXNSFu7FwkUi-n3WEqQyXP0CVdigWQ</recordid><startdate>20070701</startdate><enddate>20070701</enddate><creator>LIU, Chuan-Hsi</creator><creator>PAN, Tung-Ming</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Stability</topic><topic>strained-Si</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LIU, Chuan-Hsi</creatorcontrib><creatorcontrib>PAN, Tung-Ming</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIU, Chuan-Hsi</au><au>PAN, Tung-Ming</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hot Carrier and Negative-Bias Temperature Instability Reliabilities of Strained-Si MOSFETs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2007-07-01</date><risdate>2007</risdate><volume>54</volume><issue>7</issue><spage>1799</spage><epage>1803</epage><pages>1799-1803</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO2/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2007.898668</doi><tpages>5</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 2007-07, Vol.54 (7), p.1799-1803 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Buffers Bulk-Si carrier mobility Current carriers Degradation Density Devices Electronics Exact sciences and technology hot carrier (HC) Instability Interfaces MOSFETs negative bias temperature instability (NBTI) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stability strained-Si Transistors |
| title | Hot Carrier and Negative-Bias Temperature Instability Reliabilities of Strained-Si MOSFETs |
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