Electronically Temperature Compensated Silicon Bulk Acoustic Resonator Reference Oscillators
The paper describes the design and implementation of an electronically temperature compensated reference oscillator based on capacitive silicon micromechanical resonators. The design of a 5.5-MHz silicon bulk acoustic resonator has been optimized to offer high quality factor (> 100 000) while mai...
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| Veröffentlicht in: | IEEE journal of solid-state circuits 2007-06, Vol.42 (6), p.1425-1434 |
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| container_end_page | 1434 |
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| container_issue | 6 |
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| container_title | IEEE journal of solid-state circuits |
| container_volume | 42 |
| creator | Sundaresan, K. Ho, G.K. Pourkamali, S. Ayazi, F. |
| description | The paper describes the design and implementation of an electronically temperature compensated reference oscillator based on capacitive silicon micromechanical resonators. The design of a 5.5-MHz silicon bulk acoustic resonator has been optimized to offer high quality factor (> 100 000) while maintaining tunability in excess of 3000 ppm for fine-tuning and temperature compensation. Oscillations are sustained with a CMOS amplifier. When interfaced with the temperature compensating bias circuit, the oscillator exhibits a frequency drift of 39 ppm over 100degC as compared to an uncompensated frequency drift of 2830 ppm over the same range. The sustaining amplifier and compensation circuitry were fabricated in a 2P3M 0.6-mum CMOS process. |
| doi_str_mv | 10.1109/JSSC.2007.896521 |
| format | Article |
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The design of a 5.5-MHz silicon bulk acoustic resonator has been optimized to offer high quality factor (> 100 000) while maintaining tunability in excess of 3000 ppm for fine-tuning and temperature compensation. Oscillations are sustained with a CMOS amplifier. When interfaced with the temperature compensating bias circuit, the oscillator exhibits a frequency drift of 39 ppm over 100degC as compared to an uncompensated frequency drift of 2830 ppm over the same range. The sustaining amplifier and compensation circuitry were fabricated in a 2P3M 0.6-mum CMOS process.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.2007.896521</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Acoustic wave devices, piezoelectric and piezoresistive devices ; Acoustics ; Amplifiers ; Applied sciences ; Circuit properties ; Circuits ; CMOS ; Design. Technologies. Operation analysis. Testing ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Electrostatics ; Exact sciences and technology ; Frequency ; Frequency drift ; Integrated circuits ; MEMS oscillators and temperature compensation ; MEMS resonators ; Micromechanical devices ; Oscillators ; Oscillators, resonators, synthetizers ; Q factor ; Reference oscillators ; Resonators ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon ; Stability ; Temperature distribution ; Voltage</subject><ispartof>IEEE journal of solid-state circuits, 2007-06, Vol.42 (6), p.1425-1434</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c481t-146ec1f6932602df368cd93bce3a0a6725b4c6b9c5f5ac28d7dfa74f9d6c6a6d3</citedby><cites>FETCH-LOGICAL-c481t-146ec1f6932602df368cd93bce3a0a6725b4c6b9c5f5ac28d7dfa74f9d6c6a6d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4214984$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4214984$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18814911$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Sundaresan, K.</creatorcontrib><creatorcontrib>Ho, G.K.</creatorcontrib><creatorcontrib>Pourkamali, S.</creatorcontrib><creatorcontrib>Ayazi, F.</creatorcontrib><title>Electronically Temperature Compensated Silicon Bulk Acoustic Resonator Reference Oscillators</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>The paper describes the design and implementation of an electronically temperature compensated reference oscillator based on capacitive silicon micromechanical resonators. The design of a 5.5-MHz silicon bulk acoustic resonator has been optimized to offer high quality factor (> 100 000) while maintaining tunability in excess of 3000 ppm for fine-tuning and temperature compensation. Oscillations are sustained with a CMOS amplifier. When interfaced with the temperature compensating bias circuit, the oscillator exhibits a frequency drift of 39 ppm over 100degC as compared to an uncompensated frequency drift of 2830 ppm over the same range. The sustaining amplifier and compensation circuitry were fabricated in a 2P3M 0.6-mum CMOS process.</description><subject>Acoustic wave devices, piezoelectric and piezoresistive devices</subject><subject>Acoustics</subject><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Circuits</subject><subject>CMOS</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Electrostatics</subject><subject>Exact sciences and technology</subject><subject>Frequency</subject><subject>Frequency drift</subject><subject>Integrated circuits</subject><subject>MEMS oscillators and temperature compensation</subject><subject>MEMS resonators</subject><subject>Micromechanical devices</subject><subject>Oscillators</subject><subject>Oscillators, resonators, synthetizers</subject><subject>Q factor</subject><subject>Reference oscillators</subject><subject>Resonators</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Stability</subject><subject>Temperature distribution</subject><subject>Voltage</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkc2LFDEQxYO44DjuXfDSCOqpZ1NJOp0c12H9YmFhZwUPQshUVyBrT_eYdB_2vzfNLAoe9JRKvV8VL3mMvQS-AeD24stut90IztuNsboR8IStoGlMDa389pStOAdT26I_Y89zvi9XpQys2PernnBK4xDR9_1DdUeHIyU_zYmq7VjqIfuJumoX-4jjUL2f-x_VJY5zniJWt5THwU9jKlWgRANSdZMx9v3SzC_YWfB9pvPHc82-fri6236qr28-ft5eXtdYPEw1KE0IQVspNBddkNpgZ-UeSXrudSuavUK9t9iExqMwXdsF36pgO43a606u2bvT3mMaf86UJ3eIGam4GKg4dZZLDQY4_Jc0hmvNG94U8u0_SamUFLb87pq9_gu8H-c0lPc6CwKsAs0LxE8QpjHnRMEdUzz49OCAuyU_t-TnlvzcKb8y8uZxr88lm5D8gDH_mTMGlIWFe3XiIhH9lpUoqlHyF-YMpCk</recordid><startdate>20070601</startdate><enddate>20070601</enddate><creator>Sundaresan, K.</creator><creator>Ho, G.K.</creator><creator>Pourkamali, S.</creator><creator>Ayazi, F.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20070601</creationdate><title>Electronically Temperature Compensated Silicon Bulk Acoustic Resonator Reference Oscillators</title><author>Sundaresan, K. ; Ho, G.K. ; Pourkamali, S. ; Ayazi, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c481t-146ec1f6932602df368cd93bce3a0a6725b4c6b9c5f5ac28d7dfa74f9d6c6a6d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Acoustic wave devices, piezoelectric and piezoresistive devices</topic><topic>Acoustics</topic><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>Circuits</topic><topic>CMOS</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Electrostatics</topic><topic>Exact sciences and technology</topic><topic>Frequency</topic><topic>Frequency drift</topic><topic>Integrated circuits</topic><topic>MEMS oscillators and temperature compensation</topic><topic>MEMS resonators</topic><topic>Micromechanical devices</topic><topic>Oscillators</topic><topic>Oscillators, resonators, synthetizers</topic><topic>Q factor</topic><topic>Reference oscillators</topic><topic>Resonators</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Stability</topic><topic>Temperature distribution</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sundaresan, K.</creatorcontrib><creatorcontrib>Ho, G.K.</creatorcontrib><creatorcontrib>Pourkamali, S.</creatorcontrib><creatorcontrib>Ayazi, F.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sundaresan, K.</au><au>Ho, G.K.</au><au>Pourkamali, S.</au><au>Ayazi, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electronically Temperature Compensated Silicon Bulk Acoustic Resonator Reference Oscillators</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>2007-06-01</date><risdate>2007</risdate><volume>42</volume><issue>6</issue><spage>1425</spage><epage>1434</epage><pages>1425-1434</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>The paper describes the design and implementation of an electronically temperature compensated reference oscillator based on capacitive silicon micromechanical resonators. The design of a 5.5-MHz silicon bulk acoustic resonator has been optimized to offer high quality factor (> 100 000) while maintaining tunability in excess of 3000 ppm for fine-tuning and temperature compensation. Oscillations are sustained with a CMOS amplifier. When interfaced with the temperature compensating bias circuit, the oscillator exhibits a frequency drift of 39 ppm over 100degC as compared to an uncompensated frequency drift of 2830 ppm over the same range. The sustaining amplifier and compensation circuitry were fabricated in a 2P3M 0.6-mum CMOS process.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JSSC.2007.896521</doi><tpages>10</tpages></addata></record> |
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| identifier | ISSN: 0018-9200 |
| ispartof | IEEE journal of solid-state circuits, 2007-06, Vol.42 (6), p.1425-1434 |
| issn | 0018-9200 1558-173X |
| language | eng |
| recordid | cdi_pascalfrancis_primary_18814911 |
| source | IEEE Electronic Library (IEL) |
| subjects | Acoustic wave devices, piezoelectric and piezoresistive devices Acoustics Amplifiers Applied sciences Circuit properties Circuits CMOS Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Electrostatics Exact sciences and technology Frequency Frequency drift Integrated circuits MEMS oscillators and temperature compensation MEMS resonators Micromechanical devices Oscillators Oscillators, resonators, synthetizers Q factor Reference oscillators Resonators Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Stability Temperature distribution Voltage |
| title | Electronically Temperature Compensated Silicon Bulk Acoustic Resonator Reference Oscillators |
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