Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of 1.55 μ m (Ga,In)(N,As) multiple quantum wells
We investigate the molecular beam epitaxial growth (MBE) of (Ga,In)(N,As) multiple quantum wells at a low substrate temperature and under low As pressure. The advantages of this growth concept to achieve 1.55 μ m emissions are as follows: (i) the low growth temperature prevents composition modulatio...
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| Veröffentlicht in: | Journal of crystal growth 2007-04, Vol.301, p.529-533 |
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| container_title | Journal of crystal growth |
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| creator | Ishikawa, Fumitaro Trampert, Achim Ploog, Klaus H. |
| description | We investigate the molecular beam epitaxial growth (MBE) of (Ga,In)(N,As) multiple quantum wells at a low substrate temperature and under low As pressure. The advantages of this growth concept to achieve
1.55
μ
m
emissions are as follows: (i) the low growth temperature prevents composition modulations, leading to abrupt heterointerfaces; (ii) the low As pressure allows the introduction of a large amount of N in the layers due to the reduced competition for incorporation of group V elements; (iii) reducing the As pressure counteracts the effect of the low growth temperature, thus improving photoluminescence intensity. With this concept, (Ga,In)(N,As) quantum well emitting at
1.55
μ
m
are successfully grown in two MBE systems, equipped with different As source configurations. |
| doi_str_mv | 10.1016/j.jcrysgro.2006.09.009 |
| format | Article |
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1.55
μ
m
emissions are as follows: (i) the low growth temperature prevents composition modulations, leading to abrupt heterointerfaces; (ii) the low As pressure allows the introduction of a large amount of N in the layers due to the reduced competition for incorporation of group V elements; (iii) reducing the As pressure counteracts the effect of the low growth temperature, thus improving photoluminescence intensity. With this concept, (Ga,In)(N,As) quantum well emitting at
1.55
μ
m
are successfully grown in two MBE systems, equipped with different As source configurations.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2006.09.009</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A3. Molecular beam epitaxy ; A3. Semiconducting III–V materials ; B3. Solid state lasers ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Growth from vapor ; Materials science ; Methods of crystal growth; physics of crystal growth ; Methods of deposition of films and coatings; film growth and epitaxy ; Molecular, atomic, ion, and chemical beam epitaxy ; Nanoscale materials and structures: fabrication and characterization ; Physics ; Quantum wells ; Theory and models of film growth</subject><ispartof>Journal of crystal growth, 2007-04, Vol.301, p.529-533</ispartof><rights>2006 Elsevier B.V.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0022024806008591$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3537,23909,23910,25118,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18666284$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Ishikawa, Fumitaro</creatorcontrib><creatorcontrib>Trampert, Achim</creatorcontrib><creatorcontrib>Ploog, Klaus H.</creatorcontrib><title>Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of 1.55 μ m (Ga,In)(N,As) multiple quantum wells</title><title>Journal of crystal growth</title><description>We investigate the molecular beam epitaxial growth (MBE) of (Ga,In)(N,As) multiple quantum wells at a low substrate temperature and under low As pressure. The advantages of this growth concept to achieve
1.55
μ
m
emissions are as follows: (i) the low growth temperature prevents composition modulations, leading to abrupt heterointerfaces; (ii) the low As pressure allows the introduction of a large amount of N in the layers due to the reduced competition for incorporation of group V elements; (iii) reducing the As pressure counteracts the effect of the low growth temperature, thus improving photoluminescence intensity. With this concept, (Ga,In)(N,As) quantum well emitting at
1.55
μ
m
are successfully grown in two MBE systems, equipped with different As source configurations.</description><subject>A3. Molecular beam epitaxy</subject><subject>A3. Semiconducting III–V materials</subject><subject>B3. Solid state lasers</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Growth from vapor</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Molecular, atomic, ion, and chemical beam epitaxy</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Physics</subject><subject>Quantum wells</subject><subject>Theory and models of film growth</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNo1kc1O3DAQxy3USmxpX6HypRJIJHgcJzg3VogC0qq9wNlynHHxyvnAdlh4EZ6mz9BnwivKZWY085sPzZ-Q78BKYNCcbcutCS_xT5hKzlhTsrZkrD0gK5DnVVEzxj-RVba8YFzIQ_Ilxi1juRPYirxuph2NSxdT0AlpwmHGHC0BqR576nN1HYs5YIz7XF6ySw_UTKPBOVE7BZoekA6TR7N4HWiHeqA4u6SfnfYf_GQplHVN__2lAz2-1qe348nxr9N1PKHD4pObPdLHRY9pGegOvY9fyWerfcRv__0Ruf95dXd5U2x-X99erjcFcsFT0cum7UTTggEhQQNaY3tbV6IWndGmh8oIMNLCeV1J6DSXHNqaCVtnQkhZHZEf73NnHY32NujRuKjm4AYdXhTIpmm4FJm7eOcwH_PkMKhoHOYn9C6gSaqfnAKm9nqorfrQQ-31UKxVWY_qDQ2Cg5U</recordid><startdate>20070401</startdate><enddate>20070401</enddate><creator>Ishikawa, Fumitaro</creator><creator>Trampert, Achim</creator><creator>Ploog, Klaus H.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope></search><sort><creationdate>20070401</creationdate><title>Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of 1.55 μ m (Ga,In)(N,As) multiple quantum wells</title><author>Ishikawa, Fumitaro ; Trampert, Achim ; Ploog, Klaus H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-e242t-d869b4691c1481a1efcfdf53454bcacd13c41c8f175381ba28219504f54544883</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>A3. Molecular beam epitaxy</topic><topic>A3. Semiconducting III–V materials</topic><topic>B3. Solid state lasers</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Growth from vapor</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Molecular, atomic, ion, and chemical beam epitaxy</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Physics</topic><topic>Quantum wells</topic><topic>Theory and models of film growth</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ishikawa, Fumitaro</creatorcontrib><creatorcontrib>Trampert, Achim</creatorcontrib><creatorcontrib>Ploog, Klaus H.</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ishikawa, Fumitaro</au><au>Trampert, Achim</au><au>Ploog, Klaus H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of 1.55 μ m (Ga,In)(N,As) multiple quantum wells</atitle><jtitle>Journal of crystal growth</jtitle><date>2007-04-01</date><risdate>2007</risdate><volume>301</volume><spage>529</spage><epage>533</epage><pages>529-533</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>We investigate the molecular beam epitaxial growth (MBE) of (Ga,In)(N,As) multiple quantum wells at a low substrate temperature and under low As pressure. The advantages of this growth concept to achieve
1.55
μ
m
emissions are as follows: (i) the low growth temperature prevents composition modulations, leading to abrupt heterointerfaces; (ii) the low As pressure allows the introduction of a large amount of N in the layers due to the reduced competition for incorporation of group V elements; (iii) reducing the As pressure counteracts the effect of the low growth temperature, thus improving photoluminescence intensity. With this concept, (Ga,In)(N,As) quantum well emitting at
1.55
μ
m
are successfully grown in two MBE systems, equipped with different As source configurations.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2006.09.009</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 2007-04, Vol.301, p.529-533 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_18666284 |
| source | Elsevier ScienceDirect Journals |
| subjects | A3. Molecular beam epitaxy A3. Semiconducting III–V materials B3. Solid state lasers Cross-disciplinary physics: materials science rheology Exact sciences and technology Growth from vapor Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Nanoscale materials and structures: fabrication and characterization Physics Quantum wells Theory and models of film growth |
| title | Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of 1.55 μ m (Ga,In)(N,As) multiple quantum wells |
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