Epitaxial Design of a Direct Optically Controlled GaAs/AlGaAs-Based Heterostructure Lateral Superjunction Power Device for Fast Repetitive Switching

We outlined the epitaxial design methodology for a novel compound-semiconductor-based optically controlled power device for fast repetitive switching frequency. The proposed structure features gallium arsenide (GaAs/AlGaAs) lateral heterostructure with charge-balancing superjunction layers to make t...

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Veröffentlicht in:	IEEE transactions on electron devices 2007-03, Vol.54 (3), p.589-600
Hauptverfasser:	Sarkar, T., Mazumder, S.K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium arsenides Applied sciences Compound structure devices Devices Electric power generation Electrical engineering. Electrical power engineering Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Epitaxial growth Exact sciences and technology Gallium arsenide gallium arsenide (GaAs) Gallium arsenides heterostructure Heterostructures Methodology optically triggered power transistor (OTPT) Other multijunction devices. Power transistors. Thyristors Power electronics, power supplies power semiconductor Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices superjunction Switching
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