Epitaxial Design of a Direct Optically Controlled GaAs/AlGaAs-Based Heterostructure Lateral Superjunction Power Device for Fast Repetitive Switching
We outlined the epitaxial design methodology for a novel compound-semiconductor-based optically controlled power device for fast repetitive switching frequency. The proposed structure features gallium arsenide (GaAs/AlGaAs) lateral heterostructure with charge-balancing superjunction layers to make t...
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| Veröffentlicht in: | IEEE transactions on electron devices 2007-03, Vol.54 (3), p.589-600 |
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| container_title | IEEE transactions on electron devices |
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| creator | Sarkar, T. Mazumder, S.K. |
| description | We outlined the epitaxial design methodology for a novel compound-semiconductor-based optically controlled power device for fast repetitive switching frequency. The proposed structure features gallium arsenide (GaAs/AlGaAs) lateral heterostructure with charge-balancing superjunction layers to make the breakdown voltage of the device independent of doping of the photo-absorbing GaAs active layer and linearly dependent on the lateral length. This structure also features parallel plate like p-n junction, which reduces local electric-field crowding and supports higher reverse bias during off-state. We show that the use of lattice-matched wider bandgap AlGaAs helps to achieve superjunction charge balancing without having any effect on switching performance of the device. We also show that the particular processing methodology (ion implantation over zinc diffusion) helps in improving the breakdown-voltage capability of the device |
| doi_str_mv | 10.1109/TED.2006.890231 |
| format | Article |
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The proposed structure features gallium arsenide (GaAs/AlGaAs) lateral heterostructure with charge-balancing superjunction layers to make the breakdown voltage of the device independent of doping of the photo-absorbing GaAs active layer and linearly dependent on the lateral length. This structure also features parallel plate like p-n junction, which reduces local electric-field crowding and supports higher reverse bias during off-state. We show that the use of lattice-matched wider bandgap AlGaAs helps to achieve superjunction charge balancing without having any effect on switching performance of the device. We also show that the particular processing methodology (ion implantation over zinc diffusion) helps in improving the breakdown-voltage capability of the device</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2006.890231</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aluminum gallium arsenides ; Applied sciences ; Compound structure devices ; Devices ; Electric power generation ; Electrical engineering. Electrical power engineering ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Epitaxial growth ; Exact sciences and technology ; Gallium arsenide ; gallium arsenide (GaAs) ; Gallium arsenides ; heterostructure ; Heterostructures ; Methodology ; optically triggered power transistor (OTPT) ; Other multijunction devices. Power transistors. Thyristors ; Power electronics, power supplies ; power semiconductor ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; superjunction ; Switching</subject><ispartof>IEEE transactions on electron devices, 2007-03, Vol.54 (3), p.589-600</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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The proposed structure features gallium arsenide (GaAs/AlGaAs) lateral heterostructure with charge-balancing superjunction layers to make the breakdown voltage of the device independent of doping of the photo-absorbing GaAs active layer and linearly dependent on the lateral length. This structure also features parallel plate like p-n junction, which reduces local electric-field crowding and supports higher reverse bias during off-state. We show that the use of lattice-matched wider bandgap AlGaAs helps to achieve superjunction charge balancing without having any effect on switching performance of the device. We also show that the particular processing methodology (ion implantation over zinc diffusion) helps in improving the breakdown-voltage capability of the device</description><subject>Aluminum gallium arsenides</subject><subject>Applied sciences</subject><subject>Compound structure devices</subject><subject>Devices</subject><subject>Electric power generation</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Epitaxial growth</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>gallium arsenide (GaAs)</subject><subject>Gallium arsenides</subject><subject>heterostructure</subject><subject>Heterostructures</subject><subject>Methodology</subject><subject>optically triggered power transistor (OTPT)</subject><subject>Other multijunction devices. Power transistors. Thyristors</subject><subject>Power electronics, power supplies</subject><subject>power semiconductor</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>superjunction</subject><subject>Switching</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkU9rGzEQxZfSQN2k5x56EYWS09rS6s9KR9d2koIhIUnPy6w8m8psVltJmzTfox-4Mg4t9DTMzG-exHtF8ZHROWPULO4363lFqZprQyvO3hQzJmVdGiXU22JGKdOl4Zq_K97HuM-tEqKaFb83o0vwy0FP1hjdw0B8R4CsXUCbyPWYnIW-fyErP6Tg-x535BKWcbHsD6X8CjFPrjBh8DGFyaYpINlC7rPi3TRi2E-DTc4P5MY_Y8ivPDmLpPOBXEBM5BZHTC65JyR3zy7ZH254OCtOOugjfnitp8X3i8396qrcXl9-Wy23peWSptK0StSKGS0McugQJe04tG2FWnKQQgmjobK2rXaqpbyuKOgW-U7Trq0kAj8tzo-6Y_A_J4ypeXTRYt_DgH6Kja4l1dk0k8nP_5F7P4Uhf67RKrtaGSoztDhCNpsRA3bNGNwjhJeG0eaQUZMzag4ZNceM8sWXV1mI2ecuwGBd_HempRSGq8x9OnIOEf-uBWNCy5r_AX1am88</recordid><startdate>20070301</startdate><enddate>20070301</enddate><creator>Sarkar, T.</creator><creator>Mazumder, S.K.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QF</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>20070301</creationdate><title>Epitaxial Design of a Direct Optically Controlled GaAs/AlGaAs-Based Heterostructure Lateral Superjunction Power Device for Fast Repetitive Switching</title><author>Sarkar, T. ; Mazumder, S.K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-9b647619849e3afee50f3abb2e853a546498a2ccb2d6b03720a8be3d80fb25ea3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Aluminum gallium arsenides</topic><topic>Applied sciences</topic><topic>Compound structure devices</topic><topic>Devices</topic><topic>Electric power generation</topic><topic>Electrical engineering. Electrical power engineering</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Epitaxial growth</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>gallium arsenide (GaAs)</topic><topic>Gallium arsenides</topic><topic>heterostructure</topic><topic>Heterostructures</topic><topic>Methodology</topic><topic>optically triggered power transistor (OTPT)</topic><topic>Other multijunction devices. Power transistors. Thyristors</topic><topic>Power electronics, power supplies</topic><topic>power semiconductor</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>superjunction</topic><topic>Switching</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sarkar, T.</creatorcontrib><creatorcontrib>Mazumder, S.K.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sarkar, T.</au><au>Mazumder, S.K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Epitaxial Design of a Direct Optically Controlled GaAs/AlGaAs-Based Heterostructure Lateral Superjunction Power Device for Fast Repetitive Switching</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2007-03-01</date><risdate>2007</risdate><volume>54</volume><issue>3</issue><spage>589</spage><epage>600</epage><pages>589-600</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We outlined the epitaxial design methodology for a novel compound-semiconductor-based optically controlled power device for fast repetitive switching frequency. The proposed structure features gallium arsenide (GaAs/AlGaAs) lateral heterostructure with charge-balancing superjunction layers to make the breakdown voltage of the device independent of doping of the photo-absorbing GaAs active layer and linearly dependent on the lateral length. This structure also features parallel plate like p-n junction, which reduces local electric-field crowding and supports higher reverse bias during off-state. We show that the use of lattice-matched wider bandgap AlGaAs helps to achieve superjunction charge balancing without having any effect on switching performance of the device. We also show that the particular processing methodology (ion implantation over zinc diffusion) helps in improving the breakdown-voltage capability of the device</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2006.890231</doi><tpages>12</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 2007-03, Vol.54 (3), p.589-600 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum gallium arsenides Applied sciences Compound structure devices Devices Electric power generation Electrical engineering. Electrical power engineering Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Epitaxial growth Exact sciences and technology Gallium arsenide gallium arsenide (GaAs) Gallium arsenides heterostructure Heterostructures Methodology optically triggered power transistor (OTPT) Other multijunction devices. Power transistors. Thyristors Power electronics, power supplies power semiconductor Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices superjunction Switching |
| title | Epitaxial Design of a Direct Optically Controlled GaAs/AlGaAs-Based Heterostructure Lateral Superjunction Power Device for Fast Repetitive Switching |
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