Investigation of the paramagnetic centres and electronic properties of silicon carbide nanomaterials

Ultrafine powders of silicon carbide (SiC) exhibit a substantial electric conductivity ( sigma sub dc approx = 0.05 S cm exp -1 ) after annealing at temperatures between 1500 deg C and 1800 deg C. The origin of this phenomena is discussed with respect to structural modifications, sample composition...

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Veröffentlicht in:	Journal of physics. Condensed matter 1999-06, Vol.11 (25), p.4887-4897
Hauptverfasser:	Charpentier, S, Kassiba, A, Emery, J, Cauchetier, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Color centers and other defects Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron paramagnetic resonance and relaxation Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in condensed matter Electronic transport in multilayers, nanoscale materials and structures Exact sciences and technology Fullerenes and related materials Magnetic resonances and relaxations in condensed matter, mössbauer effect Physics Scattering by point defects, dislocations, surfaces, and other imperfections (including kondo effect) Theory of electronic transport scattering mechanisms
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