Electrical characteristics of HgCdTe Schottky diode photo-detectors with passivation layers transparent to free carriers

Electrical characteristics of HgCdTe Schottky diode photo-detectors with passivation layers transparent to free carriers

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Veröffentlicht in:Semiconductor science and technology 2007-02, Vol.22 (2), p.137-144, Article 1
Hauptverfasser: Damnjanović, Vesna, Ponomarenko, V P, Elazar, Jovan M
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container_issue 2
container_start_page 137
container_title Semiconductor science and technology
container_volume 22
creator Damnjanović, Vesna
Ponomarenko, V P
Elazar, Jovan M
description
doi_str_mv 10.1088/0268-1242/22/2/024
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title Electrical characteristics of HgCdTe Schottky diode photo-detectors with passivation layers transparent to free carriers
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