$Rate Equations for 1.3- \mu m Dots-Under-a-Well and Dots-in-a-Well Self-Assembled InAs-GaAs Quantum-Dot Lasers$

Rate Equations for 1.3- \mu m Dots-Under-a-Well and Dots-in-a-Well Self-Assembled InAs-GaAs Quantum-Dot Lasers

A rate-equation model, in which three discrete quantum-dot (QD) energy levels are assumed and all possible relaxation paths and carrier transport in the GaAs barrier are considered, is presented to analyze the steady-state performance of 1.3 mum undoped and doped dots-under-a-well (DUW) and dots-in-...

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Veröffentlicht in:	IEEE journal of quantum electronics 2006-11, Vol.42 (11), p.1175-1183
Hauptverfasser:	Tong, C.Z., Yoon, S.F., Ngo, C.Y., Liu, C.Y., Loke, W.K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Energy states Equations Exact sciences and technology Fundamental areas of phenomenology (including applications) Gallium arsenide Laser modes Lasers Optics Performance analysis Physics Quantum dot lasers Quantum dots Quantum-dot (QD) laser rate equations semi conductor laser Semiconductor lasers laser diodes Steady-state Temperature distribution Threshold current
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