Frequency dependent plasma characteristics in a capacitively coupled 300 mm wafer plasma processing chamber

Argon plasma characteristics in a dual-frequency, capacitively coupled, 300 mm-wafer plasma processing system were investigated for rf drive frequencies between 10 and 190 MHz. We report spatial and frequency dependent changes in plasma parameters such as line-integrated electron density, ion satura...

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Veröffentlicht in:	Plasma sources science & technology 2006-11, Vol.15 (4), p.879-888
Hauptverfasser:	Hebner, Gregory A, Barnat, Edward V, Miller, Paul A, Paterson, Alex M, Holland, John P
Format:	Artikel
Sprache:	eng
Schlagworte:	70 PLASMA PHYSICS AND FUSION TECHNOLOGY ARGON ELECTRON DENSITY Exact sciences and technology FREQUENCY DEPENDENCE Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges PLASMA Plasma diagnostic techniques and instrumentation RF SYSTEMS SPACE DEPENDENCE SPATIAL DISTRIBUTION
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