Frequency dependent plasma characteristics in a capacitively coupled 300 mm wafer plasma processing chamber
Argon plasma characteristics in a dual-frequency, capacitively coupled, 300 mm-wafer plasma processing system were investigated for rf drive frequencies between 10 and 190 MHz. We report spatial and frequency dependent changes in plasma parameters such as line-integrated electron density, ion satura...
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| Veröffentlicht in: | Plasma sources science & technology 2006-11, Vol.15 (4), p.879-888 |
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| container_title | Plasma sources science & technology |
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| creator | Hebner, Gregory A Barnat, Edward V Miller, Paul A Paterson, Alex M Holland, John P |
| description | Argon plasma characteristics in a dual-frequency, capacitively coupled, 300 mm-wafer plasma processing system were investigated for rf drive frequencies between 10 and 190 MHz. We report spatial and frequency dependent changes in plasma parameters such as line-integrated electron density, ion saturation current, optical emission and argon metastable density. For the conditions investigated, the line-integrated electron density was a nonlinear function of drive frequency at constant rf power. In addition, the spatial distribution of the positive ions changed from uniform to peaked in the centre as the frequency was increased. Spatially resolved optical emission increased with frequency and the relative optical emission at several spectral lines depended on frequency. Argon metastable density and spatial distribution were not a strong function of drive frequency. Metastable temperature was approximately 400 K. |
| doi_str_mv | 10.1088/0963-0252/15/4/035 |
| format | Article |
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We report spatial and frequency dependent changes in plasma parameters such as line-integrated electron density, ion saturation current, optical emission and argon metastable density. For the conditions investigated, the line-integrated electron density was a nonlinear function of drive frequency at constant rf power. In addition, the spatial distribution of the positive ions changed from uniform to peaked in the centre as the frequency was increased. Spatially resolved optical emission increased with frequency and the relative optical emission at several spectral lines depended on frequency. Argon metastable density and spatial distribution were not a strong function of drive frequency. 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We report spatial and frequency dependent changes in plasma parameters such as line-integrated electron density, ion saturation current, optical emission and argon metastable density. For the conditions investigated, the line-integrated electron density was a nonlinear function of drive frequency at constant rf power. In addition, the spatial distribution of the positive ions changed from uniform to peaked in the centre as the frequency was increased. Spatially resolved optical emission increased with frequency and the relative optical emission at several spectral lines depended on frequency. Argon metastable density and spatial distribution were not a strong function of drive frequency. Metastable temperature was approximately 400 K.</description><subject>70 PLASMA PHYSICS AND FUSION TECHNOLOGY</subject><subject>ARGON</subject><subject>ELECTRON DENSITY</subject><subject>Exact sciences and technology</subject><subject>FREQUENCY DEPENDENCE</subject><subject>Physics</subject><subject>Physics of gases, plasmas and electric discharges</subject><subject>Physics of plasmas and electric discharges</subject><subject>PLASMA</subject><subject>Plasma diagnostic techniques and instrumentation</subject><subject>RF SYSTEMS</subject><subject>SPACE DEPENDENCE</subject><subject>SPATIAL DISTRIBUTION</subject><issn>0963-0252</issn><issn>1361-6595</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqNkD1PwzAURS0EEqXwB5jMwMAQaie2E4-oooBUiQVmy7FfqCEfxk5B_fe4Kh9DF95i6encq-eD0Dkl15RU1YxIUWQk5_mM8hmbkYIfoAktBM0El_wQTX6BY3QS4yshlFZ5OUFviwDva-jNBlvw0FvoR-xbHTuNzUoHbUYILo7OROx6nJbaa-NG9wHtBpth7VuwuCAEdx3-1A2En7QPg4EYXf-yLepqCKfoqNFthLPvd4qeF7dP8_ts-Xj3ML9ZZiaXZMzA5qysGKM15SRnVhAh6pxCCcBk-oGWTa1tGiYlVNY0VjS1KC0BMHUtSTFFF7veId2tYroWzMoMfQ9mVJJTUZWJyXeMCUOMARrlg-t02ChK1Fap2hpTW2OKcsVUUppCl7uQ19Hotgm6Ny7-JZNRXjGZuGzHucH_r_dqn9_nlLdN8QWkP5KT</recordid><startdate>20061101</startdate><enddate>20061101</enddate><creator>Hebner, Gregory A</creator><creator>Barnat, Edward V</creator><creator>Miller, Paul A</creator><creator>Paterson, Alex M</creator><creator>Holland, John P</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20061101</creationdate><title>Frequency dependent plasma characteristics in a capacitively coupled 300 mm wafer plasma processing chamber</title><author>Hebner, Gregory A ; Barnat, Edward V ; Miller, Paul A ; Paterson, Alex M ; Holland, John P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c290t-ed2478441b15024d6066b21e7ee49252a9fbadddd499e8dcfd6fb67d0eecbb903</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>70 PLASMA PHYSICS AND FUSION TECHNOLOGY</topic><topic>ARGON</topic><topic>ELECTRON DENSITY</topic><topic>Exact sciences and technology</topic><topic>FREQUENCY DEPENDENCE</topic><topic>Physics</topic><topic>Physics of gases, plasmas and electric discharges</topic><topic>Physics of plasmas and electric discharges</topic><topic>PLASMA</topic><topic>Plasma diagnostic techniques and instrumentation</topic><topic>RF SYSTEMS</topic><topic>SPACE DEPENDENCE</topic><topic>SPATIAL DISTRIBUTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hebner, Gregory A</creatorcontrib><creatorcontrib>Barnat, Edward V</creatorcontrib><creatorcontrib>Miller, Paul A</creatorcontrib><creatorcontrib>Paterson, Alex M</creatorcontrib><creatorcontrib>Holland, John P</creatorcontrib><creatorcontrib>Sandia National Laboratories</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Plasma sources science & technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hebner, Gregory A</au><au>Barnat, Edward V</au><au>Miller, Paul A</au><au>Paterson, Alex M</au><au>Holland, John P</au><aucorp>Sandia National Laboratories</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Frequency dependent plasma characteristics in a capacitively coupled 300 mm wafer plasma processing chamber</atitle><jtitle>Plasma sources science & technology</jtitle><date>2006-11-01</date><risdate>2006</risdate><volume>15</volume><issue>4</issue><spage>879</spage><epage>888</epage><pages>879-888</pages><issn>0963-0252</issn><eissn>1361-6595</eissn><abstract>Argon plasma characteristics in a dual-frequency, capacitively coupled, 300 mm-wafer plasma processing system were investigated for rf drive frequencies between 10 and 190 MHz. We report spatial and frequency dependent changes in plasma parameters such as line-integrated electron density, ion saturation current, optical emission and argon metastable density. For the conditions investigated, the line-integrated electron density was a nonlinear function of drive frequency at constant rf power. In addition, the spatial distribution of the positive ions changed from uniform to peaked in the centre as the frequency was increased. Spatially resolved optical emission increased with frequency and the relative optical emission at several spectral lines depended on frequency. Argon metastable density and spatial distribution were not a strong function of drive frequency. Metastable temperature was approximately 400 K.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/0963-0252/15/4/035</doi><tpages>10</tpages></addata></record> |
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| ispartof | Plasma sources science & technology, 2006-11, Vol.15 (4), p.879-888 |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | 70 PLASMA PHYSICS AND FUSION TECHNOLOGY ARGON ELECTRON DENSITY Exact sciences and technology FREQUENCY DEPENDENCE Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges PLASMA Plasma diagnostic techniques and instrumentation RF SYSTEMS SPACE DEPENDENCE SPATIAL DISTRIBUTION |
| title | Frequency dependent plasma characteristics in a capacitively coupled 300 mm wafer plasma processing chamber |
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