Model of a MEMS sensor using a common gate MOSFET differential amplifier

The design, modelling and feasibility of a MEMS sensor based on a common gate metal-oxide-semiconductor field effect transistors (MOSFET) differential amplifier is presented. A pair of adjacent MOSFETs shares a common gate electrode that is suspended in a torsional configuration over the transistor...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2006-10, Vol.39 (20), p.4353-4358
Hauptverfasser:	Coe, D J, English, J M, Lindquist, R G, Kaiser, T J
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology General equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Micro- and nanoelectromechanical devices (mems/nems) Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing
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