Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)
Fast transient charging effects (FTCE) are found to be the source of various undesirable characteristics of high-k devices, such as V/sub th/ instability, low DC mobility and poor reliability. The intrinsic characteristics of high-k transistors free from FTCE are demonstrated using ultra-short pulse...
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| creator | Lee, B.H. Young, C.D. Choi, R. Sim, J.H. Bersuker, G. Kang, C.Y. Harris, R. Brown, G.A. Matthews, K. Song, S.C. Moumen, N. Barnett, J. Lysaght, P. Choi, K.S. Wen, H.C. Huffman, C. Alshareef, H. Majhi, P. Gopalan, S. Peterson, J. Kirsh, P. Li, H.-J. Gutt, J. Gardner, M. Huff, H.R. Zeitzoff, P. Murto, R.W. Larson, L. Ramiller, C. |
| description | Fast transient charging effects (FTCE) are found to be the source of various undesirable characteristics of high-k devices, such as V/sub th/ instability, low DC mobility and poor reliability. The intrinsic characteristics of high-k transistors free from FTCE are demonstrated using ultra-short pulsed I-V measurements, and it is found that the intrinsic mobility of high-k devices can be much higher than what has been observed in DC based measurements. The FTCE model suggests that many of DC characterization methods developed for SiO/sub 2/ devices are not sufficiently adequate for high-k devices that exhibit significant transient charging. The existence of very strong concurrent transient charging during various reliability tests also degrades the validity of test results. Finally, the implication of FTCE on the high-k implementation strategy is discussed. |
| doi_str_mv | 10.1109/IEDM.2004.1419314 |
| format | Conference Proceeding |
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The intrinsic characteristics of high-k transistors free from FTCE are demonstrated using ultra-short pulsed I-V measurements, and it is found that the intrinsic mobility of high-k devices can be much higher than what has been observed in DC based measurements. The FTCE model suggests that many of DC characterization methods developed for SiO/sub 2/ devices are not sufficiently adequate for high-k devices that exhibit significant transient charging. The existence of very strong concurrent transient charging during various reliability tests also degrades the validity of test results. Finally, the implication of FTCE on the high-k implementation strategy is discussed.</description><identifier>ISBN: 0780386841</identifier><identifier>ISBN: 9780780386846</identifier><identifier>DOI: 10.1109/IEDM.2004.1419314</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Applied sciences ; Current measurement ; Degradation ; Dielectric measurements ; Electric variables ; Electron traps ; Electronics ; Exact sciences and technology ; High K dielectric materials ; High-K gate dielectrics ; Pulse measurements ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The intrinsic characteristics of high-k transistors free from FTCE are demonstrated using ultra-short pulsed I-V measurements, and it is found that the intrinsic mobility of high-k devices can be much higher than what has been observed in DC based measurements. The FTCE model suggests that many of DC characterization methods developed for SiO/sub 2/ devices are not sufficiently adequate for high-k devices that exhibit significant transient charging. The existence of very strong concurrent transient charging during various reliability tests also degrades the validity of test results. Finally, the implication of FTCE on the high-k implementation strategy is discussed.</description><subject>Applied sciences</subject><subject>Current measurement</subject><subject>Degradation</subject><subject>Dielectric measurements</subject><subject>Electric variables</subject><subject>Electron traps</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>High K dielectric materials</subject><subject>High-K gate dielectrics</subject><subject>Pulse measurements</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Testing</subject><subject>Threshold voltage</subject><subject>Transistors</subject><isbn>0780386841</isbn><isbn>9780780386846</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2004</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFkEFLAzEQhQMiqLU_QLzkIuhha2Yzu5scpbZaqHip55KdJNtouy2bIPjvDa3gXN5hPj4ej7EbEBMAoR8Xs-e3SSkETgBBS8AzdiUaJaSqFcIFG8f4KfJhhULJS-YXfRpCHwNx2pjBUHJDiClQ5HvPN6HbFF_cuu9ALnLTWx52h20gk8K-PyLexMTTYLLC9eko6ULfcee9oxT5_Xw1nT1cs3NvttGN_3LEPuaz1fS1WL6_LKZPy4JAyVQ4LVADWNvKSjbYNGVjdRZVtqzbEqEm6StJGtEqAoOalHUWcrbkqQY5Yncn78FEMlufe1GI68MQdmb4WUNeoq6wydztiQvOuf_3aTL5C9QMYh4</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>Lee, B.H.</creator><creator>Young, C.D.</creator><creator>Choi, R.</creator><creator>Sim, J.H.</creator><creator>Bersuker, G.</creator><creator>Kang, C.Y.</creator><creator>Harris, R.</creator><creator>Brown, G.A.</creator><creator>Matthews, K.</creator><creator>Song, S.C.</creator><creator>Moumen, N.</creator><creator>Barnett, J.</creator><creator>Lysaght, P.</creator><creator>Choi, K.S.</creator><creator>Wen, H.C.</creator><creator>Huffman, C.</creator><creator>Alshareef, H.</creator><creator>Majhi, P.</creator><creator>Gopalan, S.</creator><creator>Peterson, J.</creator><creator>Kirsh, P.</creator><creator>Li, H.-J.</creator><creator>Gutt, J.</creator><creator>Gardner, M.</creator><creator>Huff, H.R.</creator><creator>Zeitzoff, P.</creator><creator>Murto, R.W.</creator><creator>Larson, L.</creator><creator>Ramiller, C.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>IQODW</scope></search><sort><creationdate>2004</creationdate><title>Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)</title><author>Lee, B.H. ; Young, C.D. ; Choi, R. ; Sim, J.H. ; Bersuker, G. ; Kang, C.Y. ; Harris, R. ; Brown, G.A. ; Matthews, K. ; Song, S.C. ; Moumen, N. ; Barnett, J. ; Lysaght, P. ; Choi, K.S. ; Wen, H.C. ; Huffman, C. ; Alshareef, H. ; Majhi, P. ; Gopalan, S. ; Peterson, J. ; Kirsh, P. ; Li, H.-J. ; Gutt, J. ; Gardner, M. ; Huff, H.R. ; Zeitzoff, P. ; Murto, R.W. ; Larson, L. ; Ramiller, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c183t-e904911ddb353747727d9ffe5d26b2416c3f53c944d8c1a49c8ded149cbcfc613</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Applied sciences</topic><topic>Current measurement</topic><topic>Degradation</topic><topic>Dielectric measurements</topic><topic>Electric variables</topic><topic>Electron traps</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>High K dielectric materials</topic><topic>High-K gate dielectrics</topic><topic>Pulse measurements</topic><topic>Semiconductor electronics. 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The intrinsic characteristics of high-k transistors free from FTCE are demonstrated using ultra-short pulsed I-V measurements, and it is found that the intrinsic mobility of high-k devices can be much higher than what has been observed in DC based measurements. The FTCE model suggests that many of DC characterization methods developed for SiO/sub 2/ devices are not sufficiently adequate for high-k devices that exhibit significant transient charging. The existence of very strong concurrent transient charging during various reliability tests also degrades the validity of test results. Finally, the implication of FTCE on the high-k implementation strategy is discussed.</abstract><cop>Piscataway NJ</cop><pub>IEEE</pub><doi>10.1109/IEDM.2004.1419314</doi><tpages>4</tpages></addata></record> |
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| identifier | ISBN: 0780386841 |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Applied sciences Current measurement Degradation Dielectric measurements Electric variables Electron traps Electronics Exact sciences and technology High K dielectric materials High-K gate dielectrics Pulse measurements Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Testing Threshold voltage Transistors |
| title | Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE) |
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