Evaluation of fermi level pinning in low, midgap and high workfunction metal gate electrodes on ALD and MOCVD HfO2 under high temperature exposure

Bibliographische Detailangaben

Hauptverfasser:	JHA, Rashmi, LEE, Jaehoon, BEI CHEN, LAZAR, Heather, GURGANUS, Jason, BISWAS, Nivedita, MAJHI, Prashant, BROWN, George, MISRA, Veena
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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