Evaluation of fermi level pinning in low, midgap and high workfunction metal gate electrodes on ALD and MOCVD HfO2 under high temperature exposure
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| creator | JHA, Rashmi LEE, Jaehoon BEI CHEN LAZAR, Heather GURGANUS, Jason BISWAS, Nivedita MAJHI, Prashant BROWN, George MISRA, Veena |
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| doi_str_mv | 10.1109/IEDM.2004.1419137 |
| format | Conference Proceeding |
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| identifier | ISBN: 0780386841 |
| ispartof | 2004 International Electron Devices Meeting, 2004, p.295-298 |
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| language | eng |
| recordid | cdi_pascalfrancis_primary_17806417 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Evaluation of fermi level pinning in low, midgap and high workfunction metal gate electrodes on ALD and MOCVD HfO2 under high temperature exposure |
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