Gate oxide integrity improvement by optimising poly deposition process

The gate oxide integrity of oxide thickness 13.5 nm has been studied for different amorphous poly deposition conditions. The poly grain was varied by the poly deposition conditions. The study, which was carried out on BiCMOS devices, showed substantial reliability degradation in the gate oxides when...

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Hauptverfasser:	Tze Kiong Ng, Yap, A., Keng Foo Lo, Poh Chuan Ang
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Amorphous materials Applied sciences Circuit testing Current measurement Design. Technologies. Operation analysis. Testing Dielectrics Electronic equipment testing Electronics Exact sciences and technology Gate leakage Integrated circuits Leakage current Manufacturing processes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Voltage
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