Electrical signature of the defect associated with gate oxide breakdown

Oxide breakdown is an important issue for MOS devices. It is widely believed that defects generated within the oxides are responsible for the breakdown. However, it is still not clear which type of the various generated defects is the main cause for the failure. This paper unambiguously shows that g...

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Veröffentlicht in:	IEEE electron device letters 2006-05, Vol.27 (5), p.393-395
Hauptverfasser:	Zhang, W.D., Zhang, J.F., Zhao, C.Z., Chang, M.H., Groeseneken, G., Degraeve, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Breakdown Breaking down Capture cross sections Character generation Compound structure devices Defects Degradation Dielectric breakdown Electric breakdown Electron traps Electronics Exact sciences and technology gate oxides hole traps instability Leakage current MOS devices Nonvolatile memory Oxides Production reliability Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signatures Silicon compounds
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