Electrical signature of the defect associated with gate oxide breakdown
Oxide breakdown is an important issue for MOS devices. It is widely believed that defects generated within the oxides are responsible for the breakdown. However, it is still not clear which type of the various generated defects is the main cause for the failure. This paper unambiguously shows that g...
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| Veröffentlicht in: | IEEE electron device letters 2006-05, Vol.27 (5), p.393-395 |
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| container_end_page | 395 |
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| container_title | IEEE electron device letters |
| container_volume | 27 |
| creator | Zhang, W.D. Zhang, J.F. Zhao, C.Z. Chang, M.H. Groeseneken, G. Degraeve, R. |
| description | Oxide breakdown is an important issue for MOS devices. It is widely believed that defects generated within the oxides are responsible for the breakdown. However, it is still not clear which type of the various generated defects is the main cause for the failure. This paper unambiguously shows that generated hole traps, low-field electron traps, and high-field electron traps with a capture cross section of 10/sup -15/-10/sup -16/ cm/sup 2/ are not the main source of the breakdown. The generated high-field electron trap with a capture cross section in the order of 10/sup -14/ cm/sup 2/ is the only defect having all the characteristics required for breaking down the oxide. This paper should provide useful information for modeling oxide breakdown. |
| doi_str_mv | 10.1109/LED.2006.873384 |
| format | Article |
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It is widely believed that defects generated within the oxides are responsible for the breakdown. However, it is still not clear which type of the various generated defects is the main cause for the failure. This paper unambiguously shows that generated hole traps, low-field electron traps, and high-field electron traps with a capture cross section of 10/sup -15/-10/sup -16/ cm/sup 2/ are not the main source of the breakdown. The generated high-field electron trap with a capture cross section in the order of 10/sup -14/ cm/sup 2/ is the only defect having all the characteristics required for breaking down the oxide. This paper should provide useful information for modeling oxide breakdown.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2006.873384</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Breakdown ; Breaking down ; Capture cross sections ; Character generation ; Compound structure devices ; Defects ; Degradation ; Dielectric breakdown ; Electric breakdown ; Electron traps ; Electronics ; Exact sciences and technology ; gate oxides ; hole traps ; instability ; Leakage current ; MOS devices ; Nonvolatile memory ; Oxides ; Production ; reliability ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Signatures ; Silicon compounds</subject><ispartof>IEEE electron device letters, 2006-05, Vol.27 (5), p.393-395</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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It is widely believed that defects generated within the oxides are responsible for the breakdown. However, it is still not clear which type of the various generated defects is the main cause for the failure. This paper unambiguously shows that generated hole traps, low-field electron traps, and high-field electron traps with a capture cross section of 10/sup -15/-10/sup -16/ cm/sup 2/ are not the main source of the breakdown. The generated high-field electron trap with a capture cross section in the order of 10/sup -14/ cm/sup 2/ is the only defect having all the characteristics required for breaking down the oxide. This paper should provide useful information for modeling oxide breakdown.</description><subject>Applied sciences</subject><subject>Breakdown</subject><subject>Breaking down</subject><subject>Capture cross sections</subject><subject>Character generation</subject><subject>Compound structure devices</subject><subject>Defects</subject><subject>Degradation</subject><subject>Dielectric breakdown</subject><subject>Electric breakdown</subject><subject>Electron traps</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>gate oxides</subject><subject>hole traps</subject><subject>instability</subject><subject>Leakage current</subject><subject>MOS devices</subject><subject>Nonvolatile memory</subject><subject>Oxides</subject><subject>Production</subject><subject>reliability</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Signatures</subject><subject>Silicon compounds</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU2LFDEQhoMoOK6ePXgJguKlZ6uSdD6Oso6rMOBFzyGdruxm7e1ekx5W_70ZZmHBg6cqqOctqHoYe42wRQR3vt992goAvbVGSquesA32ve2g1_Ip24BR2EkE_Zy9qPUGAJUyasMudxPFteQYJl7z1RzWQyG-JL5eEx8ptSEPtS4xh5VGfp_Xa37VWr78ziPxoVD4OS7380v2LIWp0quHesZ-fN59v_jS7b9dfr34uO-itGLtknUDOkeIkSCJAa1LBhxCDEDQjwnRDjakIUnSyao-qtEIHJzQDkn28oy9P-29K8uvA9XV3-YaaZrCTMuhemHheLZq4If_gqgNCtM7YRv69h_0ZjmUuZ3hHQoE2ZsjdH6CYllqLZT8Xcm3ofzxCP4owDcB_ijAnwS0xLuHtaG296YS5pjrY8wY7ZqExr05cZmIHsdaaKWN_AvHwozO</recordid><startdate>20060501</startdate><enddate>20060501</enddate><creator>Zhang, W.D.</creator><creator>Zhang, J.F.</creator><creator>Zhao, C.Z.</creator><creator>Chang, M.H.</creator><creator>Groeseneken, G.</creator><creator>Degraeve, R.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Signatures</topic><topic>Silicon compounds</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, W.D.</creatorcontrib><creatorcontrib>Zhang, J.F.</creatorcontrib><creatorcontrib>Zhao, C.Z.</creatorcontrib><creatorcontrib>Chang, M.H.</creatorcontrib><creatorcontrib>Groeseneken, G.</creatorcontrib><creatorcontrib>Degraeve, R.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhang, W.D.</au><au>Zhang, J.F.</au><au>Zhao, C.Z.</au><au>Chang, M.H.</au><au>Groeseneken, G.</au><au>Degraeve, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical signature of the defect associated with gate oxide breakdown</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2006-05-01</date><risdate>2006</risdate><volume>27</volume><issue>5</issue><spage>393</spage><epage>395</epage><pages>393-395</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Oxide breakdown is an important issue for MOS devices. It is widely believed that defects generated within the oxides are responsible for the breakdown. However, it is still not clear which type of the various generated defects is the main cause for the failure. This paper unambiguously shows that generated hole traps, low-field electron traps, and high-field electron traps with a capture cross section of 10/sup -15/-10/sup -16/ cm/sup 2/ are not the main source of the breakdown. The generated high-field electron trap with a capture cross section in the order of 10/sup -14/ cm/sup 2/ is the only defect having all the characteristics required for breaking down the oxide. This paper should provide useful information for modeling oxide breakdown.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2006.873384</doi><tpages>3</tpages></addata></record> |
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| subjects | Applied sciences Breakdown Breaking down Capture cross sections Character generation Compound structure devices Defects Degradation Dielectric breakdown Electric breakdown Electron traps Electronics Exact sciences and technology gate oxides hole traps instability Leakage current MOS devices Nonvolatile memory Oxides Production reliability Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signatures Silicon compounds |
| title | Electrical signature of the defect associated with gate oxide breakdown |
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