High-power InGaAs/InP charge-compensated uni-traveling-carrier balanced photodetector

High-power InGaAs/InP charge-compensated uni-traveling-carrier balanced photodetector

High-power balanced photodetectors with top-illuminated, charge-compensated UTC photodiodes have been demonstrated. A 10 /spl mu/m-diameter photodiode balanced pair achieved a bandwidth of 26 GHz, and a large signal saturation current of 15 mA for each photodiode. These devices can be used in high-p...

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Bibliographische Detailangaben
Hauptverfasser: Ning Li, Hao Chen, Demiguel, S., Xiaowei Li, Campbell, J.C., Isshiki, T.D., Kinsey, G.S., Sudharsansan, R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Applied sciences
Bandwidth
Electronics
Exact sciences and technology
Frequency
High speed optical techniques
Indium gallium arsenide
Indium phosphide
Optical noise
Optical saturation
Optoelectronic devices
Photodetectors
Photodiodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stimulated emission
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Beschreibung
Zusammenfassung:High-power balanced photodetectors with top-illuminated, charge-compensated UTC photodiodes have been demonstrated. A 10 /spl mu/m-diameter photodiode balanced pair achieved a bandwidth of 26 GHz, and a large signal saturation current of 15 mA for each photodiode. These devices can be used in high-power and high-frequency analog optical links to improve the link performance.
DOI:10.1109/LEOS.2004.1363187