The effect of FSG stability at high temperature on stress-induced voiding in Cu dual-damascene interconnects

The effect of FSG film properties as inter-metal dielectrics on stress-induced voiding (SIV) phenomena in Cu dual-damascene interconnects has been investigated with various FSG-films. HDPFSG and PEFSG2 showed less SIV failure than those of PEFSGI and 3. These behaviors of SIV according to FSG films...

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Hauptverfasser:	OH, Hyeok-Sang, CHUNG, Juhyuk, LEE, Jung-Woo, KANG, Ki-Ho, PARK, Dea-Gun, HAH, Sangrok, CHO, In-Soo, PARK, Kwang-Myeon
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Compressive stress Design. Technologies. Operation analysis. Testing Dielectrics Electronics Exact sciences and technology Gases Integrated circuit interconnections Integrated circuits Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon compounds Stability Temperature Testing Thermal stresses Tin
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Zusammenfassung:	The effect of FSG film properties as inter-metal dielectrics on stress-induced voiding (SIV) phenomena in Cu dual-damascene interconnects has been investigated with various FSG-films. HDPFSG and PEFSG2 showed less SIV failure than those of PEFSGI and 3. These behaviors of SIV according to FSG films agree well with desorbed amount of hydrogen, oxygen and fluorine ions from FSG films at high temperature over 400/spl deg/C. The result of SIMS analysis suggests that SIV phenomena are improved by application of stable FSG film without desorption at high temperature such as HDPFSG and PEFSG2 used in this work.
DOI:	10.1109/IITC.2004.1345671