Temperature dependence of the EUV responsivity of silicon photodiode detectors

Responsivity of silicon photodiodes was measured from -100 C to +50 C in the 3 to 250 nm wavelength range using synchrotron and laboratory radiation sources. Two types of silicon photodiodes were studied, the AXUV series having a thin nitrided silicon dioxide surface layer and the SXUV series having...

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Veröffentlicht in:	IEEE transactions on electron devices 2006-02, Vol.53 (2), p.218-223
Hauptverfasser:	Kjornrattanawanich, B., Korde, R., Boyer, C.N., Holland, G.E., Seely, J.F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Extreme ultraviolet (EUV) photodiodes Extreme values General equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Lithography Microelectronic fabrication (materials and surfaces technology) Optoelectronic devices Photodiodes Physics Radiation detectors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing Silicon Silicon radiation detectors Steppers Surface layer Synchrotron radiation Synchrotrons Ultraviolet detectors Wavelengths
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