An inductorless Ka-band SiGe HBT ring oscillator

An inductorless Ka-band silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) ring oscillator is presented. The Ka-band operation is achieved with the addition of a cross-coupled pair to the simple differential inverting amplifier of a single-stage ring oscillator. Implemented with 120-GH...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2005-10, Vol.15 (10), p.682-684
Hauptverfasser:	Wei-Min Lance Kuo, Cressler, J.D., Chen, Y.-J.E., Joseph, A.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Active inductors Amplifiers Applied sciences Circuit properties Circuits Differential amplifiers Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Frequency Frequency ranges Germanium silicon alloys Heterojunction bipolar transistor (HBT) Heterojunction bipolar transistors inductorless Ka-band Magnetic devices Microwaves Operational amplifiers Oscillators Oscillators, resonators, synthetizers Phase noise Power consumption ring oscillator Ring oscillators Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon germanides Silicon germanium silicon-germanium (SiGe) State of the art Tunable circuits and devices
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