Physical insights regarding design and performance of independent-gate FinFETs
Important physical insights regarding the design and performance of independent-gate FinFETs, e.g., the MIGFET , are gained from measured data and predictions from our process/physics-based double-gate (DG) MOSFET model (UFDG) in Spice3. Inversion charge-centroid shifting, modulated by gate biases a...
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| Veröffentlicht in: | IEEE transactions on electron devices 2005-10, Vol.52 (10), p.2198-2206 |
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| container_title | IEEE transactions on electron devices |
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| creator | Weimin Zhang Fossum, J.G. Mathew, L. Yang Du |
| description | Important physical insights regarding the design and performance of independent-gate FinFETs, e.g., the MIGFET , are gained from measured data and predictions from our process/physics-based double-gate (DG) MOSFET model (UFDG) in Spice3. Inversion charge-centroid shifting, modulated by gate biases as well as by quantum-confinement and short-channel effects, underlies the sensitivity of the MIGFET (front-gate) threshold voltage to the back-gate bias. MIGFET design and operation-mode options are examined for optimizing circuit applications. Further, novel design of a single-device RF mixer and a double-balanced counterpart using MIGFETs is studied with UFDG/Spice3. Reasonably good MIGFET mixers, with regard to conversion gain and linearity with small-size/low-voltage/low-power requirements, can be achieved with optimal biases on the two gates and good design of the MIGFET structure. |
| doi_str_mv | 10.1109/TED.2005.856184 |
| format | Article |
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Inversion charge-centroid shifting, modulated by gate biases as well as by quantum-confinement and short-channel effects, underlies the sensitivity of the MIGFET (front-gate) threshold voltage to the back-gate bias. MIGFET design and operation-mode options are examined for optimizing circuit applications. Further, novel design of a single-device RF mixer and a double-balanced counterpart using MIGFETs is studied with UFDG/Spice3. Reasonably good MIGFET mixers, with regard to conversion gain and linearity with small-size/low-voltage/low-power requirements, can be achieved with optimal biases on the two gates and good design of the MIGFET structure.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2005.856184</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Circuit optimization ; Circuit properties ; Compound structure devices ; Conversion ; Devices ; Digital circuits ; Double-gate (DG) FinFET ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Gain ; Gates (circuits) ; Insulated gate FETs ; Inversions ; Mixers ; MOSFETs ; multiple independent-gate FinFET (MIGFET) ; Optimization ; RF mixer ; Semiconductor device modeling ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Signal convertors ; SPICE ; threshold-voltage control ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2005-10, Vol.52 (10), p.2198-2206</ispartof><rights>2005 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c447t-a3e7c6b0fc7f9d7733192ce49db2a83007c10f7f17de716baecb1f1a1d4ea5f73</citedby><cites>FETCH-LOGICAL-c447t-a3e7c6b0fc7f9d7733192ce49db2a83007c10f7f17de716baecb1f1a1d4ea5f73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1510909$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1510909$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17169189$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Weimin Zhang</creatorcontrib><creatorcontrib>Fossum, J.G.</creatorcontrib><creatorcontrib>Mathew, L.</creatorcontrib><creatorcontrib>Yang Du</creatorcontrib><title>Physical insights regarding design and performance of independent-gate FinFETs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>Important physical insights regarding the design and performance of independent-gate FinFETs, e.g., the MIGFET , are gained from measured data and predictions from our process/physics-based double-gate (DG) MOSFET model (UFDG) in Spice3. Inversion charge-centroid shifting, modulated by gate biases as well as by quantum-confinement and short-channel effects, underlies the sensitivity of the MIGFET (front-gate) threshold voltage to the back-gate bias. MIGFET design and operation-mode options are examined for optimizing circuit applications. Further, novel design of a single-device RF mixer and a double-balanced counterpart using MIGFETs is studied with UFDG/Spice3. Reasonably good MIGFET mixers, with regard to conversion gain and linearity with small-size/low-voltage/low-power requirements, can be achieved with optimal biases on the two gates and good design of the MIGFET structure.</description><subject>Applied sciences</subject><subject>Circuit optimization</subject><subject>Circuit properties</subject><subject>Compound structure devices</subject><subject>Conversion</subject><subject>Devices</subject><subject>Digital circuits</subject><subject>Double-gate (DG) FinFET</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gain</subject><subject>Gates (circuits)</subject><subject>Insulated gate FETs</subject><subject>Inversions</subject><subject>Mixers</subject><subject>MOSFETs</subject><subject>multiple independent-gate FinFET (MIGFET)</subject><subject>Optimization</subject><subject>RF mixer</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Signal convertors</subject><subject>SPICE</subject><subject>threshold-voltage control</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kctLAzEQxoMoWB9nD14WQT1tnexm8ziKbyjqQc8hzU7alDZbk-2h_70pLRQ8eJlhZn7zwcxHyAWFIaWg7r6eHocVQDOUDaeSHZABbRpRKs74IRkAUFmqWtbH5CSlWS45Y9WAvH9O18lbMy98SH4y7VMRcWJi68OkaDG3QmFCWywxui4uTLBYdC7DLS4xh9CXE9Nj8ezD89NXOiNHzswTnu_yKfnO7YfXcvTx8vZwPyotY6IvTY3C8jE4K5xqhahrqiqLTLXjysgaQFgKTjgqWhSUjw3aMXXU0JahaZyoT8ntVncZu58Vpl4vfLI4n5uA3SppqXhFmRKQyZt_yUoCBwYbyas_4KxbxZCv0JILJhUolqG7LWRjl1JEp5fRL0xcawp6Y4PONuiNDXprQ9643smalN_sYn6hT_u1fJ6iUmXucst5RNyPm6wJqv4F31iQHA</recordid><startdate>20051001</startdate><enddate>20051001</enddate><creator>Weimin Zhang</creator><creator>Fossum, J.G.</creator><creator>Mathew, L.</creator><creator>Yang Du</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20051001</creationdate><title>Physical insights regarding design and performance of independent-gate FinFETs</title><author>Weimin Zhang ; Fossum, J.G. ; Mathew, L. ; Yang Du</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c447t-a3e7c6b0fc7f9d7733192ce49db2a83007c10f7f17de716baecb1f1a1d4ea5f73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Applied sciences</topic><topic>Circuit optimization</topic><topic>Circuit properties</topic><topic>Compound structure devices</topic><topic>Conversion</topic><topic>Devices</topic><topic>Digital circuits</topic><topic>Double-gate (DG) FinFET</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gain</topic><topic>Gates (circuits)</topic><topic>Insulated gate FETs</topic><topic>Inversions</topic><topic>Mixers</topic><topic>MOSFETs</topic><topic>multiple independent-gate FinFET (MIGFET)</topic><topic>Optimization</topic><topic>RF mixer</topic><topic>Semiconductor device modeling</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Signal convertors</topic><topic>SPICE</topic><topic>threshold-voltage control</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Weimin Zhang</creatorcontrib><creatorcontrib>Fossum, J.G.</creatorcontrib><creatorcontrib>Mathew, L.</creatorcontrib><creatorcontrib>Yang Du</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Weimin Zhang</au><au>Fossum, J.G.</au><au>Mathew, L.</au><au>Yang Du</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Physical insights regarding design and performance of independent-gate FinFETs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2005-10-01</date><risdate>2005</risdate><volume>52</volume><issue>10</issue><spage>2198</spage><epage>2206</epage><pages>2198-2206</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Important physical insights regarding the design and performance of independent-gate FinFETs, e.g., the MIGFET , are gained from measured data and predictions from our process/physics-based double-gate (DG) MOSFET model (UFDG) in Spice3. Inversion charge-centroid shifting, modulated by gate biases as well as by quantum-confinement and short-channel effects, underlies the sensitivity of the MIGFET (front-gate) threshold voltage to the back-gate bias. MIGFET design and operation-mode options are examined for optimizing circuit applications. Further, novel design of a single-device RF mixer and a double-balanced counterpart using MIGFETs is studied with UFDG/Spice3. Reasonably good MIGFET mixers, with regard to conversion gain and linearity with small-size/low-voltage/low-power requirements, can be achieved with optimal biases on the two gates and good design of the MIGFET structure.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2005.856184</doi><tpages>9</tpages></addata></record> |
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| subjects | Applied sciences Circuit optimization Circuit properties Compound structure devices Conversion Devices Digital circuits Double-gate (DG) FinFET Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gain Gates (circuits) Insulated gate FETs Inversions Mixers MOSFETs multiple independent-gate FinFET (MIGFET) Optimization RF mixer Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal convertors SPICE threshold-voltage control Transistors |
| title | Physical insights regarding design and performance of independent-gate FinFETs |
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