Quantum-mechanical effects on the threshold voltage of undoped double-gate MOSFETs

Quantum-mechanical (QM), or carrier energy-quantization, effects on the subthreshold characteristics, including the threshold voltage (V/sub t/), of generic undoped double-gate (DG) CMOS devices with ultrathin (Si) bodies (UTBs) are physically modeled. The analytic model, with dependences on the UTB...

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Veröffentlicht in:	IEEE electron device letters 2005-08, Vol.26 (8), p.579-582
Hauptverfasser:	Trivedi, V.P., Fossum, J.G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Carrier confinement Carrier-energy quantization Carriers CMOS Design. Technologies. Operation analysis. Testing Devices double-gate (DG) MOSFETs Electronics Electrostatics Exact sciences and technology FinFETs Integrated circuits Mathematical analysis MOSFETs Orientation Poisson equations Quantization Scalability Schrodinger equation Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Threshold voltage Transistors
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