Effect of the energy of ion-chemical etching of GaAs/AlxGa1-xAs structures on photoluminescence and degradation of devices

Effect of the energy of ion-chemical etching of GaAs/AlxGa1-xAs structures on photoluminescence and degradation of devices

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2005-05, Vol.35 (5), p.445-448
Hauptverfasser: Zubanov, Andrei V, Uspenskii, Mikhail B, Shishkin, Viktor A
Format: Artikel
Sprache:eng ; rus
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 448
container_issue 5
container_start_page 445
container_title Quantum electronics (Woodbury, N.Y.)
container_volume 35
creator Zubanov, Andrei V
Uspenskii, Mikhail B
Shishkin, Viktor A
description
doi_str_mv 10.1070/QE2005v035n05ABEH002691
format Article
fullrecord <record><control><sourceid>pascalfrancis_iop_p</sourceid><recordid>TN_cdi_pascalfrancis_primary_16975797</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>16975797</sourcerecordid><originalsourceid>FETCH-LOGICAL-i192t-ca8ba78da8f6af8ffc2fc5449bacdceafa52947c8ac3e3415f17aaba7d2ee0983</originalsourceid><addsrcrecordid>eNp1kTFPwzAQhTOARCn8BrwwMITacRwnY6hCi1QJIcFsXe1zY9Q6UZxWLb-eREVigel0d9896d6LojtGHxmVdPZWJZSKA-XCU1E-VUtKk6xgF9GE0YzHMmf5VXQdwielVLKMT6KvylrUPWks6Wsk6LHbnMbONT7WNe6chi3BXtfOb8b5AsowK7fHBbD4WAYS-m6v-32HgTSetHXTN9v9znkMGr1GAt4Qg5sODPSD5ihh8OA0hpvo0sI24O1PnUYfz9X7fBmvXhcv83IVO1YkfawhX4PMDeQ2A5tbqxOrRZoWa9BGI1gQSZFKnYPmyFMmLJMAw4lJEGmR82l0f9ZtIQzP2A68dkG1ndtBd1IsK6SQhRy4hzPnmvZ3O_imRt8UF0qoklHVGjuwyV-sGlNQ_6TAvwG0Mn8J</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effect of the energy of ion-chemical etching of GaAs/AlxGa1-xAs structures on photoluminescence and degradation of devices</title><source>Institute of Physics Journals</source><creator>Zubanov, Andrei V ; Uspenskii, Mikhail B ; Shishkin, Viktor A</creator><creatorcontrib>Zubanov, Andrei V ; Uspenskii, Mikhail B ; Shishkin, Viktor A</creatorcontrib><identifier>ISSN: 1063-7818</identifier><identifier>DOI: 10.1070/QE2005v035n05ABEH002691</identifier><language>eng ; rus</language><publisher>Woodbury, NY: IOP Publishing</publisher><ispartof>Quantum electronics (Woodbury, N.Y.), 2005-05, Vol.35 (5), p.445-448</ispartof><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1070/QE2005v035n05ABEH002691/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53885</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=16975797$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Zubanov, Andrei V</creatorcontrib><creatorcontrib>Uspenskii, Mikhail B</creatorcontrib><creatorcontrib>Shishkin, Viktor A</creatorcontrib><title>Effect of the energy of ion-chemical etching of GaAs/AlxGa1-xAs structures on photoluminescence and degradation of devices</title><title>Quantum electronics (Woodbury, N.Y.)</title><issn>1063-7818</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1kTFPwzAQhTOARCn8BrwwMITacRwnY6hCi1QJIcFsXe1zY9Q6UZxWLb-eREVigel0d9896d6LojtGHxmVdPZWJZSKA-XCU1E-VUtKk6xgF9GE0YzHMmf5VXQdwielVLKMT6KvylrUPWks6Wsk6LHbnMbONT7WNe6chi3BXtfOb8b5AsowK7fHBbD4WAYS-m6v-32HgTSetHXTN9v9znkMGr1GAt4Qg5sODPSD5ihh8OA0hpvo0sI24O1PnUYfz9X7fBmvXhcv83IVO1YkfawhX4PMDeQ2A5tbqxOrRZoWa9BGI1gQSZFKnYPmyFMmLJMAw4lJEGmR82l0f9ZtIQzP2A68dkG1ndtBd1IsK6SQhRy4hzPnmvZ3O_imRt8UF0qoklHVGjuwyV-sGlNQ_6TAvwG0Mn8J</recordid><startdate>20050531</startdate><enddate>20050531</enddate><creator>Zubanov, Andrei V</creator><creator>Uspenskii, Mikhail B</creator><creator>Shishkin, Viktor A</creator><general>IOP Publishing</general><general>American Institute of Physics</general><scope>IQODW</scope></search><sort><creationdate>20050531</creationdate><title>Effect of the energy of ion-chemical etching of GaAs/AlxGa1-xAs structures on photoluminescence and degradation of devices</title><author>Zubanov, Andrei V ; Uspenskii, Mikhail B ; Shishkin, Viktor A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i192t-ca8ba78da8f6af8ffc2fc5449bacdceafa52947c8ac3e3415f17aaba7d2ee0983</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng ; rus</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zubanov, Andrei V</creatorcontrib><creatorcontrib>Uspenskii, Mikhail B</creatorcontrib><creatorcontrib>Shishkin, Viktor A</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Quantum electronics (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zubanov, Andrei V</au><au>Uspenskii, Mikhail B</au><au>Shishkin, Viktor A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of the energy of ion-chemical etching of GaAs/AlxGa1-xAs structures on photoluminescence and degradation of devices</atitle><jtitle>Quantum electronics (Woodbury, N.Y.)</jtitle><date>2005-05-31</date><risdate>2005</risdate><volume>35</volume><issue>5</issue><spage>445</spage><epage>448</epage><pages>445-448</pages><issn>1063-7818</issn><cop>Woodbury, NY</cop><pub>IOP Publishing</pub><doi>10.1070/QE2005v035n05ABEH002691</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1063-7818
ispartof Quantum electronics (Woodbury, N.Y.), 2005-05, Vol.35 (5), p.445-448
issn 1063-7818
language eng ; rus
recordid cdi_pascalfrancis_primary_16975797
source Institute of Physics Journals
title Effect of the energy of ion-chemical etching of GaAs/AlxGa1-xAs structures on photoluminescence and degradation of devices
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T14%3A32%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_iop_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20the%20energy%20of%20ion-chemical%20etching%20of%20GaAs/AlxGa1-xAs%20structures%20on%20photoluminescence%20and%20degradation%20of%20devices&rft.jtitle=Quantum%20electronics%20(Woodbury,%20N.Y.)&rft.au=Zubanov,%20Andrei%20V&rft.date=2005-05-31&rft.volume=35&rft.issue=5&rft.spage=445&rft.epage=448&rft.pages=445-448&rft.issn=1063-7818&rft_id=info:doi/10.1070/QE2005v035n05ABEH002691&rft_dat=%3Cpascalfrancis_iop_p%3E16975797%3C/pascalfrancis_iop_p%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true