Design, growth and performance of different QW structures for improved 1300 nm InGaAsP lasers

We have investigated the material quality of three alternative InGaAsP 1.3 μm wavelength multiple quantum well structures with strained wells, fabricated by low pressure metal organic vapour phase epitaxy. The designs have radically different compositions but similar calculated properties concerning...

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Veröffentlicht in:	Journal of crystal growth 1998-12, Vol.195 (1), p.700-705
Hauptverfasser:	Silfvenius, Christofer, Landgren, Gunnar
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Exact sciences and technology Fundamental areas of phenomenology (including applications) Laser materials Lasers Materials science Methods of deposition of films and coatings film growth and epitaxy Optical materials Optics Physics Semiconductor lasers laser diodes Vapor phase epitaxy growth from vapor phase
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