The effect of crystallizing procedure on microstructure and characteristics of sputter-deposited TiNi shape memory thin films
Two kinds of Ti-rich TiNi shape memory thin films were deposited onto monocrystal silicon substrates at room temperature and high temperature by using the magnetron-sputtering technique. Their crystallizing procedures are different from each other. The first type of film was originally amorphous and...
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| Veröffentlicht in: | Journal of micromechanics and microengineering 2005-03, Vol.15 (3), p.575-579 |
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| container_title | Journal of micromechanics and microengineering |
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| creator | Liu, Y S Xu, D Jiang, B H Yuan, Z Y Van Houtte, P |
| description | Two kinds of Ti-rich TiNi shape memory thin films were deposited onto monocrystal silicon substrates at room temperature and high temperature by using the magnetron-sputtering technique. Their crystallizing procedures are different from each other. The first type of film was originally amorphous and post-crystallized at a higher annealing temperature (600 deg C) after sputtering, but the second film type was crystallized in situ during sputtering at about 500 deg C. It was found that there are clear differences of microstructure and characteristics between both kinds of film, such as grain size, growth texture, stress range, phase transformation behaviors etc. In order to improve and enhance film properties, the objective of the present work is to reveal the reason for these differences occurring and understand the relationship between the crystallizing procedures, microstructures and characteristics of the films. |
| doi_str_mv | 10.1088/0960-1317/15/3/019 |
| format | Article |
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Their crystallizing procedures are different from each other. The first type of film was originally amorphous and post-crystallized at a higher annealing temperature (600 deg C) after sputtering, but the second film type was crystallized in situ during sputtering at about 500 deg C. It was found that there are clear differences of microstructure and characteristics between both kinds of film, such as grain size, growth texture, stress range, phase transformation behaviors etc. In order to improve and enhance film properties, the objective of the present work is to reveal the reason for these differences occurring and understand the relationship between the crystallizing procedures, microstructures and characteristics of the films.</description><identifier>ISSN: 0960-1317</identifier><identifier>EISSN: 1361-6439</identifier><identifier>DOI: 10.1088/0960-1317/15/3/019</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Mechanical engineering. Machine design ; Mechanical instruments, equipment and techniques ; Microelectronic fabrication (materials and surfaces technology) ; Micromechanical devices and systems ; Physics ; Precision engineering, watch making ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Their crystallizing procedures are different from each other. The first type of film was originally amorphous and post-crystallized at a higher annealing temperature (600 deg C) after sputtering, but the second film type was crystallized in situ during sputtering at about 500 deg C. It was found that there are clear differences of microstructure and characteristics between both kinds of film, such as grain size, growth texture, stress range, phase transformation behaviors etc. In order to improve and enhance film properties, the objective of the present work is to reveal the reason for these differences occurring and understand the relationship between the crystallizing procedures, microstructures and characteristics of the films.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Mechanical engineering. Machine design</subject><subject>Mechanical instruments, equipment and techniques</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Micromechanical devices and systems</subject><subject>Physics</subject><subject>Precision engineering, watch making</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Machine design</topic><topic>Mechanical instruments, equipment and techniques</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Micromechanical devices and systems</topic><topic>Physics</topic><topic>Precision engineering, watch making</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Y S</creatorcontrib><creatorcontrib>Xu, D</creatorcontrib><creatorcontrib>Jiang, B H</creatorcontrib><creatorcontrib>Yuan, Z Y</creatorcontrib><creatorcontrib>Van Houtte, P</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Civil Engineering Abstracts</collection><jtitle>Journal of micromechanics and microengineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Y S</au><au>Xu, D</au><au>Jiang, B H</au><au>Yuan, Z Y</au><au>Van Houtte, P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of crystallizing procedure on microstructure and characteristics of sputter-deposited TiNi shape memory thin films</atitle><jtitle>Journal of micromechanics and microengineering</jtitle><date>2005-03-01</date><risdate>2005</risdate><volume>15</volume><issue>3</issue><spage>575</spage><epage>579</epage><pages>575-579</pages><issn>0960-1317</issn><eissn>1361-6439</eissn><abstract>Two kinds of Ti-rich TiNi shape memory thin films were deposited onto monocrystal silicon substrates at room temperature and high temperature by using the magnetron-sputtering technique. Their crystallizing procedures are different from each other. The first type of film was originally amorphous and post-crystallized at a higher annealing temperature (600 deg C) after sputtering, but the second film type was crystallized in situ during sputtering at about 500 deg C. It was found that there are clear differences of microstructure and characteristics between both kinds of film, such as grain size, growth texture, stress range, phase transformation behaviors etc. In order to improve and enhance film properties, the objective of the present work is to reveal the reason for these differences occurring and understand the relationship between the crystallizing procedures, microstructures and characteristics of the films.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/0960-1317/15/3/019</doi><tpages>5</tpages></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Applied sciences Electronics Exact sciences and technology Instruments, apparatus, components and techniques common to several branches of physics and astronomy Mechanical engineering. Machine design Mechanical instruments, equipment and techniques Microelectronic fabrication (materials and surfaces technology) Micromechanical devices and systems Physics Precision engineering, watch making Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | The effect of crystallizing procedure on microstructure and characteristics of sputter-deposited TiNi shape memory thin films |
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