Very low Schottky barrier to N-type silicon with PtEr-stack silicide

Very low Schottky barrier to N-type silicon with PtEr-stack silicide

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Hauptverfasser: XIAOHUI TANG, KATCKI, J, DUBOIS, E, RATAJCZAK, J, LARRIEU, G, LOUMAYE, P, NISOLE, O, BAYOT, V
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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creator XIAOHUI TANG
KATCKI, J
DUBOIS, E
RATAJCZAK, J
LARRIEU, G
LOUMAYE, P
NISOLE, O
BAYOT, V
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identifier ISSN: 0161-6374
ispartof Proceedings - Electrochemical Society, 2003, p.99-104
issn 0161-6374
2576-1579
language eng
recordid cdi_pascalfrancis_primary_16545654
source IOP Publishing Journals
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Very low Schottky barrier to N-type silicon with PtEr-stack silicide
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