A high performance 90nm SOI technology with 0.992 μm26T-SRAM cell
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| creator | KHARE, Mukesh KU, S. H FUNG, S. K. H GABOR, A GRIBELYUK, M HOLMES, S JAMIN, F. F LAI, W. L LEE, W. H LI, Y MCFARLAND, P MO, R DONATON, R. A MITTL, S NARASIMHA, S NIELSEN, D PURTELL, R RAUSCH, W SANKARAN, S SNARE, J TSOU, L VAYSHENKER, A WAGNER, T GRECO, S WEHELLA-GAMAGE, D WU, E WU, S YAN, W BARTH, E FERGUSON, R GILBERT, P SCHEPIS, D SEKIGUCHI, A GOLDBLATT, R BRODSKY, C WELSER, J MULLER, K. P AGNELLO, P CHEN, X CHOU, A DELLAGUARDIA, R DESHPANDE, S DORIS, B |
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| identifier | ISBN: 9780780374621 |
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| language | eng |
| recordid | cdi_pascalfrancis_primary_15785964 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Digital circuits Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | A high performance 90nm SOI technology with 0.992 μm26T-SRAM cell |
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