Single-source cvd of 3C-SiC films in a LPCVD reactor. II. Reactor modeling and chemical kinetics

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Veröffentlicht in:	Journal of the Electrochemical Society 2004-03, Vol.151 (3), p.C215-C219
Hauptverfasser:	VALENTE, Gianluca, WIJESUNDARA, Muthu B. J, MABOUDIAN, Roya, CARRARO, Carlo
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
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doi_str_mv	10.1149/1.1646142
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source	Institute of Physics Journals
subjects	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
title	Single-source cvd of 3C-SiC films in a LPCVD reactor. II. Reactor modeling and chemical kinetics
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