Novel 900 MHz/1.9 GHz dual-mode power amplifier employing MEMS switches for optimum matching
A novel scheme is proposed for a compact band-switchable power amplifier that employs Micro-Electro-Mechanical System (MEMS) switches in a matching network (MN). According to the on/off status, the switches change the frequency response of the MN, and then the optimum matching can be achieved in dif...
Gespeichert in:
| Veröffentlicht in: | IEEE microwave and wireless components letters 2004-03, Vol.14 (3), p.121-123 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 123 |
|---|---|
| container_issue | 3 |
| container_start_page | 121 |
| container_title | IEEE microwave and wireless components letters |
| container_volume | 14 |
| creator | Fukuda, A. Okazaki, H. Hirota, T. Yamao, Y. |
| description | A novel scheme is proposed for a compact band-switchable power amplifier that employs Micro-Electro-Mechanical System (MEMS) switches in a matching network (MN). According to the on/off status, the switches change the frequency response of the MN, and then the optimum matching can be achieved in different frequency bands. Following the proposed scheme, a dual-band GaAs FET amplifier is designed for the 0.9-GHz and 1.9-GHz bands. The experimental results exhibit the small signal gain of greater than 16 dB and the saturated output power of 31 dBm in each frequency band with adequate efficiency. The performance levels are very close to those of single-mode power amplifiers employing the same FET. |
| doi_str_mv | 10.1109/LMWC.2003.821496 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_pascalfrancis_primary_15630670</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1278387</ieee_id><sourcerecordid>2426676991</sourcerecordid><originalsourceid>FETCH-LOGICAL-c381t-9f28b6a19f6f478bba6677c9fbb5d804e2006ba2e392c10fec2fa983585002f63</originalsourceid><addsrcrecordid>eNp9kc9rFDEUx4MoWFfvgpcgaE-zzUsy-XGUpe0WdtuDihchZLKJpsxsxmTH0v71zbCFggdP78t7n_fg-74IvQeyBCD6bLP9sVpSQthSUeBavEAn0LaqASn4y1kzaIAR_Rq9KeWWEOCKwwn6eZ3--h5rQvB2_XAGS40v1w94N9m-GdLO4zHd-YztMPYxxKp8Vek-7n_h7fn2Ky538eB--4JDyjiNhzhMAx5s7VXkLXoVbF_8u6e6QN8vzr-t1s3m5vJq9WXTOKbg0OhAVScs6CACl6rrrBBSOh26rt0pwn21JTpLPdPUAQne0WC1Yq1qCaFBsAU6Pd4dc_oz-XIwQyzO973d-zQVowkIyZWcyc__JanispUKKvjxH_A2TXlfXRilmATO60cXiBwhl1Mp2Qcz5jjYfG-AmDkVM6di5lTMMZW68unpri3O9iHbvYvlea8VjAhJKvfhyEXv_fOYSsWUZI8kdpMS</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>883714415</pqid></control><display><type>article</type><title>Novel 900 MHz/1.9 GHz dual-mode power amplifier employing MEMS switches for optimum matching</title><source>IEEE Electronic Library (IEL)</source><creator>Fukuda, A. ; Okazaki, H. ; Hirota, T. ; Yamao, Y.</creator><creatorcontrib>Fukuda, A. ; Okazaki, H. ; Hirota, T. ; Yamao, Y.</creatorcontrib><description>A novel scheme is proposed for a compact band-switchable power amplifier that employs Micro-Electro-Mechanical System (MEMS) switches in a matching network (MN). According to the on/off status, the switches change the frequency response of the MN, and then the optimum matching can be achieved in different frequency bands. Following the proposed scheme, a dual-band GaAs FET amplifier is designed for the 0.9-GHz and 1.9-GHz bands. The experimental results exhibit the small signal gain of greater than 16 dB and the saturated output power of 31 dBm in each frequency band with adequate efficiency. The performance levels are very close to those of single-mode power amplifiers employing the same FET.</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2003.821496</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplifiers ; Applied sciences ; Bands ; Circuit properties ; Dual band ; Electric, optical and optoelectronic circuits ; Electrical engineering. Electrical power engineering ; Electronic circuits ; Electronics ; Exact sciences and technology ; FETs ; Frequency bands ; Frequency response ; Gallium arsenide ; Matching ; Micro- and nanoelectromechanical devices (mems/nems) ; Microelectromechanical systems ; Micromechanical devices ; Microswitches ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Microwaves ; Optimization ; Power amplifiers ; Power electronics, power supplies ; Power generation ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Switches</subject><ispartof>IEEE microwave and wireless components letters, 2004-03, Vol.14 (3), p.121-123</ispartof><rights>2004 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c381t-9f28b6a19f6f478bba6677c9fbb5d804e2006ba2e392c10fec2fa983585002f63</citedby><cites>FETCH-LOGICAL-c381t-9f28b6a19f6f478bba6677c9fbb5d804e2006ba2e392c10fec2fa983585002f63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1278387$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1278387$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15630670$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Fukuda, A.</creatorcontrib><creatorcontrib>Okazaki, H.</creatorcontrib><creatorcontrib>Hirota, T.</creatorcontrib><creatorcontrib>Yamao, Y.</creatorcontrib><title>Novel 900 MHz/1.9 GHz dual-mode power amplifier employing MEMS switches for optimum matching</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>A novel scheme is proposed for a compact band-switchable power amplifier that employs Micro-Electro-Mechanical System (MEMS) switches in a matching network (MN). According to the on/off status, the switches change the frequency response of the MN, and then the optimum matching can be achieved in different frequency bands. Following the proposed scheme, a dual-band GaAs FET amplifier is designed for the 0.9-GHz and 1.9-GHz bands. The experimental results exhibit the small signal gain of greater than 16 dB and the saturated output power of 31 dBm in each frequency band with adequate efficiency. The performance levels are very close to those of single-mode power amplifiers employing the same FET.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Bands</subject><subject>Circuit properties</subject><subject>Dual band</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>Frequency bands</subject><subject>Frequency response</subject><subject>Gallium arsenide</subject><subject>Matching</subject><subject>Micro- and nanoelectromechanical devices (mems/nems)</subject><subject>Microelectromechanical systems</subject><subject>Micromechanical devices</subject><subject>Microswitches</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Microwaves</subject><subject>Optimization</subject><subject>Power amplifiers</subject><subject>Power electronics, power supplies</subject><subject>Power generation</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Switches</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc9rFDEUx4MoWFfvgpcgaE-zzUsy-XGUpe0WdtuDihchZLKJpsxsxmTH0v71zbCFggdP78t7n_fg-74IvQeyBCD6bLP9sVpSQthSUeBavEAn0LaqASn4y1kzaIAR_Rq9KeWWEOCKwwn6eZ3--h5rQvB2_XAGS40v1w94N9m-GdLO4zHd-YztMPYxxKp8Vek-7n_h7fn2Ky538eB--4JDyjiNhzhMAx5s7VXkLXoVbF_8u6e6QN8vzr-t1s3m5vJq9WXTOKbg0OhAVScs6CACl6rrrBBSOh26rt0pwn21JTpLPdPUAQne0WC1Yq1qCaFBsAU6Pd4dc_oz-XIwQyzO973d-zQVowkIyZWcyc__JanispUKKvjxH_A2TXlfXRilmATO60cXiBwhl1Mp2Qcz5jjYfG-AmDkVM6di5lTMMZW68unpri3O9iHbvYvlea8VjAhJKvfhyEXv_fOYSsWUZI8kdpMS</recordid><startdate>20040301</startdate><enddate>20040301</enddate><creator>Fukuda, A.</creator><creator>Okazaki, H.</creator><creator>Hirota, T.</creator><creator>Yamao, Y.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20040301</creationdate><title>Novel 900 MHz/1.9 GHz dual-mode power amplifier employing MEMS switches for optimum matching</title><author>Fukuda, A. ; Okazaki, H. ; Hirota, T. ; Yamao, Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c381t-9f28b6a19f6f478bba6677c9fbb5d804e2006ba2e392c10fec2fa983585002f63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Bands</topic><topic>Circuit properties</topic><topic>Dual band</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electrical engineering. Electrical power engineering</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>FETs</topic><topic>Frequency bands</topic><topic>Frequency response</topic><topic>Gallium arsenide</topic><topic>Matching</topic><topic>Micro- and nanoelectromechanical devices (mems/nems)</topic><topic>Microelectromechanical systems</topic><topic>Micromechanical devices</topic><topic>Microswitches</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Microwaves</topic><topic>Optimization</topic><topic>Power amplifiers</topic><topic>Power electronics, power supplies</topic><topic>Power generation</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Switches</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fukuda, A.</creatorcontrib><creatorcontrib>Okazaki, H.</creatorcontrib><creatorcontrib>Hirota, T.</creatorcontrib><creatorcontrib>Yamao, Y.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fukuda, A.</au><au>Okazaki, H.</au><au>Hirota, T.</au><au>Yamao, Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Novel 900 MHz/1.9 GHz dual-mode power amplifier employing MEMS switches for optimum matching</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2004-03-01</date><risdate>2004</risdate><volume>14</volume><issue>3</issue><spage>121</spage><epage>123</epage><pages>121-123</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>A novel scheme is proposed for a compact band-switchable power amplifier that employs Micro-Electro-Mechanical System (MEMS) switches in a matching network (MN). According to the on/off status, the switches change the frequency response of the MN, and then the optimum matching can be achieved in different frequency bands. Following the proposed scheme, a dual-band GaAs FET amplifier is designed for the 0.9-GHz and 1.9-GHz bands. The experimental results exhibit the small signal gain of greater than 16 dB and the saturated output power of 31 dBm in each frequency band with adequate efficiency. The performance levels are very close to those of single-mode power amplifiers employing the same FET.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2003.821496</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1531-1309 |
| ispartof | IEEE microwave and wireless components letters, 2004-03, Vol.14 (3), p.121-123 |
| issn | 1531-1309 2771-957X 1558-1764 2771-9588 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_15630670 |
| source | IEEE Electronic Library (IEL) |
| subjects | Amplifiers Applied sciences Bands Circuit properties Dual band Electric, optical and optoelectronic circuits Electrical engineering. Electrical power engineering Electronic circuits Electronics Exact sciences and technology FETs Frequency bands Frequency response Gallium arsenide Matching Micro- and nanoelectromechanical devices (mems/nems) Microelectromechanical systems Micromechanical devices Microswitches Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Optimization Power amplifiers Power electronics, power supplies Power generation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Switches |
| title | Novel 900 MHz/1.9 GHz dual-mode power amplifier employing MEMS switches for optimum matching |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T10%3A08%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Novel%20900%20MHz/1.9%20GHz%20dual-mode%20power%20amplifier%20employing%20MEMS%20switches%20for%20optimum%20matching&rft.jtitle=IEEE%20microwave%20and%20wireless%20components%20letters&rft.au=Fukuda,%20A.&rft.date=2004-03-01&rft.volume=14&rft.issue=3&rft.spage=121&rft.epage=123&rft.pages=121-123&rft.issn=1531-1309&rft.eissn=1558-1764&rft.coden=IMWCBJ&rft_id=info:doi/10.1109/LMWC.2003.821496&rft_dat=%3Cproquest_RIE%3E2426676991%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=883714415&rft_id=info:pmid/&rft_ieee_id=1278387&rfr_iscdi=true |