100 A and 3.1 kV 4H-SiC GTO thyristors

100 A and 3.1 kV 4H-SiC GTO thyristors

In this paper, we report on asymmetric SiC GTOs (gate turn-off thyristors), fabricated at Northrop Grumman with the assistance of Silicon Power Co. A module containing six 1 mm/spl times/1 mm GTOs connected in parallel has demonstrated 100 A of switching current capability. This is the highest curre...

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Bibliographische Detailangaben
Hauptverfasser: Van Campen, S., Ezis, A., Zingaro, J., Storaska, G., Clarke, R.C., Elliott, K., Temple, V., Hits, D., Thompson, M., Roe, K., Hansen, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Applied sciences
Current density
Doping
Electric breakdown
Electronics
Exact sciences and technology
Fabrication
Other multijunction devices. Power transistors. Thyristors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon carbide
Substrates
Temperature
Testing, measurement, noise and reliability
Thermal conductivity
Thyristors
Voltage
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Zusammenfassung:In this paper, we report on asymmetric SiC GTOs (gate turn-off thyristors), fabricated at Northrop Grumman with the assistance of Silicon Power Co. A module containing six 1 mm/spl times/1 mm GTOs connected in parallel has demonstrated 100 A of switching current capability. This is the highest current reported to date with GTOs designed for greater than 3 kV forward blocking voltage. GTOs fabricated from the same wafer have achieved a forward blocking voltage of 3.1 kV, which was the testing limit of the instrumentation. This represents a record high breakdown voltage for GTOs with a drift layer thickness of 30 /spl mu/m. These GTOs also demonstrated record low leakage currents of
DOI:10.1109/LECHPD.2002.1146732