High-performance and high-uniformity InP/InGaAs/InP DHBT technology for high-speed optical communication systems

Recently, InP/InGaAs/InP double-heterostructure bipolar transistors (DHBT) have attracted a lot of attention in the realization of high-speed (>40 Gb/s) optical communication systems (G. Raghaven et al., IEEE Spectrum, Oct. 2000; Y. Baeyens et al, IEEE GaAs IC Symp. Tech. Dig., pp. 125-128, 2001;...

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Hauptverfasser:	Yang, Y., Frackoviak, J., Liu, C.T., Chen, C.J., Chua, L.-L., Sung, W.J., Tate, A., Tong, J., Reyes, R., Kopf, R., Ruel, R., Werder, D., Houtsma, V., Georgiou, G., Weiner, J.S., Baeyens, Y., Chen, Y.K.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Bipolar transistors Breakdown voltage DH-HEMTs Electronics Exact sciences and technology Gallium arsenide Indium gallium arsenide Indium phosphide Low voltage Optical fiber communication Reproducibility of results Robustness Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Systems, networks and services of telecommunications Telecommunications Telecommunications and information theory Transistors Transmission and modulation (techniques and equipments)
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