The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN
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| Veröffentlicht in: | Semiconductor science and technology 2004-03, Vol.19 (3), p.427-432 |
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| container_end_page | 432 |
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| container_issue | 3 |
| container_start_page | 427 |
| container_title | Semiconductor science and technology |
| container_volume | 19 |
| creator | Zanato, D Gokden, S Balkan, N Ridley, B K Schaff, W J |
| description | |
| doi_str_mv | 10.1088/0268-1242/19/3/024 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0268-1242 |
| ispartof | Semiconductor science and technology, 2004-03, Vol.19 (3), p.427-432 |
| issn | 0268-1242 1361-6641 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_15526349 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Thin films and multilayers |
| title | The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN |
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