Physical and electrical properties of polycrystalline Si1-xGex deposited using single-wafer-type low pressure CVD

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Veröffentlicht in:	Journal of the Electrochemical Society 2004, Vol.151 (1), p.G13-G17
Hauptverfasser:	RANG, Sung-Kwan, JAE JIN KIM, BYOUNG GI MIN, KO, Dae-Hong, CHEOL WOONG YANG, KWAN YONG LIM
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
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description
doi_str_mv	10.1149/1.1629100
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source	IOP Publishing Journals
subjects	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
title	Physical and electrical properties of polycrystalline Si1-xGex deposited using single-wafer-type low pressure CVD
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