Static dipole (hyper)polarizability of the silicon atom

We report static dipole (hyper)polarizability values for silicon. Relying on finite-field Møller-Plesset perturbation theory and coupled-cluster calculations with large Gaussian-type basis sets of near-Hartree-Fock quality, we find electron correlation effects to be small for both properties. We est...

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Veröffentlicht in:Journal of physics. B, Atomic, molecular, and optical physics Atomic, molecular, and optical physics, 2003-05, Vol.36 (10), p.2011-2017
Hauptverfasser: Maroulis, George, Pouchan, Claude
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container_issue 10
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container_title Journal of physics. B, Atomic, molecular, and optical physics
container_volume 36
creator Maroulis, George
Pouchan, Claude
description We report static dipole (hyper)polarizability values for silicon. Relying on finite-field Møller-Plesset perturbation theory and coupled-cluster calculations with large Gaussian-type basis sets of near-Hartree-Fock quality, we find electron correlation effects to be small for both properties. We estimate the mean dipole polarizability at ᾱ = 37.4 ± 0.1 e2a0 2Eh -1 and γ̄ = (4.3 ± 0.1) × 104 e4a0 4Eh -3.
doi_str_mv 10.1088/0953-4075/36/10/311
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subjects Ab initio calculations
Atomic and molecular physics
Atomic properties and interactions with photons
Calculations and mathematical techniques in atomic and molecular physics (excluding electron correlation calculations)
Chemical Sciences
Coupled cluster theory
Electric and magnetic moments, polarizability
Electronic structure of atoms, molecules and their ions: theory
Exact sciences and technology
or physical chemistry
Physics
Properties of atoms and atomic ions
Statistical model calculations (including Thomas-Fermi and Thomas-Fermi-Dirac models)
Theoretical and
title Static dipole (hyper)polarizability of the silicon atom
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