Effects of Boron and Germanium Base Profiles on SiGe and SiGe:C BJT Characteristics
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| creator | Sadovnikov, A. Printy, C. Budri, T. Loo, R. Meunier-Beillard, P. El-Diwany, M. |
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| doi_str_mv | 10.1109/ESSDERC.2002.195005 |
| format | Conference Proceeding |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Applied sciences Boron Carbon dioxide Doping profiles Electronics Epitaxial growth Exact sciences and technology Germanium silicon alloys Linearity Radio frequency Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon germanium Temperature Transistors Tunneling |
| title | Effects of Boron and Germanium Base Profiles on SiGe and SiGe:C BJT Characteristics |
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