Patterning of Narrow Au Nanocluster Lines Using V2O5 Nanowire Masks and Ion-Beam Milling

Patterning of Narrow Au Nanocluster Lines Using V2O5 Nanowire Masks and Ion-Beam Milling

A shadow mask technique employing V2O5 nanowires and ion-beam milling is used to define narrow lines of monolayer-encapsulated Au nanoclusters. When positioned between electrodes these lines are shown to be conducting and to have nonlinear I−V characteristics with nonzero threshold voltages consiste...

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Veröffentlicht in:Nano letters 2003-02, Vol.3 (2), p.135-138
Hauptverfasser: Ancona, M. G, Kooi, S. E, Kruppa, W, Snow, A. W, Foos, E. E, Whitman, L. J, Park, D, Shirey, L
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Applied sciences
Electronics
Exact sciences and technology
Molecular electronics, nanoelectronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page 138
container_issue 2
container_start_page 135
container_title Nano letters
container_volume 3
creator Ancona, M. G
Kooi, S. E
Kruppa, W
Snow, A. W
Foos, E. E
Whitman, L. J
Park, D
Shirey, L
description A shadow mask technique employing V2O5 nanowires and ion-beam milling is used to define narrow lines of monolayer-encapsulated Au nanoclusters. When positioned between electrodes these lines are shown to be conducting and to have nonlinear I−V characteristics with nonzero threshold voltages consistent with Coulomb blockade.
doi_str_mv 10.1021/nl0258224
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source American Chemical Society Journals
subjects Applied sciences
Electronics
Exact sciences and technology
Molecular electronics, nanoelectronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Patterning of Narrow Au Nanocluster Lines Using V2O5 Nanowire Masks and Ion-Beam Milling
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