Low insertion loss and low dispersion penalty InGaAsP quantum-well high-speed electroabsorption modulator for 40-Gb/s very-short-reach, long-reach, and long-haul applications

We present a metal-organic-chemical-vapor-deposition-grown low-optical-insertion-loss InGaAsP/InP multiple-quantum-well electroabsorption modulator (EAM), suitable for both nonreturn-to-zero (NRZ) and return-to-zero (RZ) applications. The EAM exhibits a dynamic (RF) extinction ratio of 11.5 dB at 15...

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Veröffentlicht in:	Journal of lightwave technology 2002-12, Vol.20 (12), p.2052-2056
Hauptverfasser:	Won-Jin Choi, Bond, A.E., Jongwoo Kim, Jiaming Zhang, Jambunathan, R., Foulk, H., O'Brien, S., Van Norman, J., Vandegrift, D., Wanamaker, C., Shakespeare, J., He Cao
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Dispersions Electric, optical and optoelectronic circuits Electroabsorption modulators Electronics Exact sciences and technology Extinction ratio High speed High speed optical techniques Indium phosphide Insertion loss Integrated optoelectronics. Optoelectronic circuits Modulation Modulators Noise levels Optical and optoelectronic circuits Optical losses Optical modulation Optical signal processing Quantum well devices Quantum wells Radio frequency
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