Role of the CdS buffer layer as an active optical element in Cu(In,Ga)Se2 thin-film solar cells
ZnO/CdS/Cu(In,Ga)Se2 (CIGS) thin‐film heterojunction solar cells with CdS buffer layers of thicknesses between 0 and 85 nm are characterized by current–voltage, quantum efficiency, and optical reflection measurements. We investigate the correlation between the short‐circuit current density and the C...
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| Veröffentlicht in: | Progress in photovoltaics 2002-11, Vol.10 (7), p.457-463 |
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| container_title | Progress in photovoltaics |
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| creator | Orgassa, Kay Rau, Uwe Nguyen, Quang Werner Schock, Hans Werner, Jürgen H. |
| description | ZnO/CdS/Cu(In,Ga)Se2 (CIGS) thin‐film heterojunction solar cells with CdS buffer layers of thicknesses between 0 and 85 nm are characterized by current–voltage, quantum efficiency, and optical reflection measurements. We investigate the correlation between the short‐circuit current density and the CdS layer thickness, focusing on the counteracting effects of light absorption and reduced optical reflection induced by the CdS layer. Both effects almost compensate each other for CdS layer thicknesses between 0 and 40 nm. Thus, an optimization of the short‐circuit current density is not achieved by omitting the CdS layer, but rather by replacing the CdS buffer with an alternative buffer material with higher bandgap energy and optical constants similar to those of CdS. Copyright © 2002 John Wiley & Sons, Ltd. |
| doi_str_mv | 10.1002/pip.438 |
| format | Article |
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We investigate the correlation between the short‐circuit current density and the CdS layer thickness, focusing on the counteracting effects of light absorption and reduced optical reflection induced by the CdS layer. Both effects almost compensate each other for CdS layer thicknesses between 0 and 40 nm. Thus, an optimization of the short‐circuit current density is not achieved by omitting the CdS layer, but rather by replacing the CdS buffer with an alternative buffer material with higher bandgap energy and optical constants similar to those of CdS. Copyright © 2002 John Wiley & Sons, Ltd.</description><identifier>ISSN: 1062-7995</identifier><identifier>EISSN: 1099-159X</identifier><identifier>DOI: 10.1002/pip.438</identifier><language>eng</language><publisher>Chichester, UK: John Wiley & Sons, Ltd</publisher><subject>Applied sciences ; Energy ; Exact sciences and technology ; Natural energy ; Photovoltaic conversion ; Solar cells. 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Photovolt: Res. Appl</addtitle><description>ZnO/CdS/Cu(In,Ga)Se2 (CIGS) thin‐film heterojunction solar cells with CdS buffer layers of thicknesses between 0 and 85 nm are characterized by current–voltage, quantum efficiency, and optical reflection measurements. We investigate the correlation between the short‐circuit current density and the CdS layer thickness, focusing on the counteracting effects of light absorption and reduced optical reflection induced by the CdS layer. Both effects almost compensate each other for CdS layer thicknesses between 0 and 40 nm. Thus, an optimization of the short‐circuit current density is not achieved by omitting the CdS layer, but rather by replacing the CdS buffer with an alternative buffer material with higher bandgap energy and optical constants similar to those of CdS. Copyright © 2002 John Wiley & Sons, Ltd.</description><subject>Applied sciences</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Natural energy</subject><subject>Photovoltaic conversion</subject><subject>Solar cells. 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Photoelectrochemical cells</topic><topic>Solar energy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Orgassa, Kay</creatorcontrib><creatorcontrib>Rau, Uwe</creatorcontrib><creatorcontrib>Nguyen, Quang</creatorcontrib><creatorcontrib>Werner Schock, Hans</creatorcontrib><creatorcontrib>Werner, Jürgen H.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><jtitle>Progress in photovoltaics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Orgassa, Kay</au><au>Rau, Uwe</au><au>Nguyen, Quang</au><au>Werner Schock, Hans</au><au>Werner, Jürgen H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Role of the CdS buffer layer as an active optical element in Cu(In,Ga)Se2 thin-film solar cells</atitle><jtitle>Progress in photovoltaics</jtitle><addtitle>Prog. Photovolt: Res. Appl</addtitle><date>2002-11</date><risdate>2002</risdate><volume>10</volume><issue>7</issue><spage>457</spage><epage>463</epage><pages>457-463</pages><issn>1062-7995</issn><eissn>1099-159X</eissn><abstract>ZnO/CdS/Cu(In,Ga)Se2 (CIGS) thin‐film heterojunction solar cells with CdS buffer layers of thicknesses between 0 and 85 nm are characterized by current–voltage, quantum efficiency, and optical reflection measurements. We investigate the correlation between the short‐circuit current density and the CdS layer thickness, focusing on the counteracting effects of light absorption and reduced optical reflection induced by the CdS layer. Both effects almost compensate each other for CdS layer thicknesses between 0 and 40 nm. Thus, an optimization of the short‐circuit current density is not achieved by omitting the CdS layer, but rather by replacing the CdS buffer with an alternative buffer material with higher bandgap energy and optical constants similar to those of CdS. Copyright © 2002 John Wiley & Sons, Ltd.</abstract><cop>Chichester, UK</cop><pub>John Wiley & Sons, Ltd</pub><doi>10.1002/pip.438</doi><tpages>7</tpages></addata></record> |
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| source | Wiley-Blackwell Journals |
| subjects | Applied sciences Energy Exact sciences and technology Natural energy Photovoltaic conversion Solar cells. Photoelectrochemical cells Solar energy |
| title | Role of the CdS buffer layer as an active optical element in Cu(In,Ga)Se2 thin-film solar cells |
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