Characteristics and thermal stability of ruthenium/p-GaAs Schottky contacts
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| Veröffentlicht in: | Semiconductor science and technology 1999-12, Vol.14 (12), p.1080-1083 |
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| container_end_page | 1083 |
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| container_issue | 12 |
| container_start_page | 1080 |
| container_title | Semiconductor science and technology |
| container_volume | 14 |
| creator | Wagener, M C Botha, J R Leitch, A W R |
| description | |
| doi_str_mv | 10.1088/0268-1242/14/12/312 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0268-1242 |
| ispartof | Semiconductor science and technology, 1999-12, Vol.14 (12), p.1080-1083 |
| issn | 0268-1242 1361-6641 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_1195608 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface double layers, schottky barriers, and work functions |
| title | Characteristics and thermal stability of ruthenium/p-GaAs Schottky contacts |
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