Growth and properties of V-doped HgSe crystals
Gespeichert in:
| Veröffentlicht in: | Inorganic materials 2001-06, Vol.37 (6), p.556-559 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 559 |
|---|---|
| container_issue | 6 |
| container_start_page | 556 |
| container_title | Inorganic materials |
| container_volume | 37 |
| creator | PARANCHICH, S. Yu PARANCHICH, Yu. S MAKOGONENKO, V. N ROMANYUK, O. S ANDRIICHUK, M. D |
| description | |
| doi_str_mv | 10.1023/A:1017599813479 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_1043435</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1043435</sourcerecordid><originalsourceid>FETCH-LOGICAL-p182t-338c3e88f13c683d04b3114f8d303ea7666105c3b36b43cd08a3bbabb5560f233</originalsourceid><addsrcrecordid>eNotzEtLAzEUQOEgCo7Vtdss3KbeOzfJZNyVoq1QcOFjW_LUkdoJyYD031uwq4-zOYzdIswRWrpfPCBgp_reIMmuP2MNajCCsGvPWQPQgkBt1CW7qvUbAKQyfcPmqzL-Tl_c7gPPZcyxTEOsfEz8Q4RjBr7-fI3cl0Od7K5es4t0JN6cnLH3p8e35VpsXlbPy8VGZDTtJIiMp2hMQvLaUADpCFEmEwgo2k5rjaA8OdJOkg9gLDlnnVNKQ2qJZuzu_5tt9XaXit37oW5zGX5sOWwRJElS9AeJ60Qh</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Growth and properties of V-doped HgSe crystals</title><source>SpringerNature Journals</source><creator>PARANCHICH, S. Yu ; PARANCHICH, Yu. S ; MAKOGONENKO, V. N ; ROMANYUK, O. S ; ANDRIICHUK, M. D</creator><creatorcontrib>PARANCHICH, S. Yu ; PARANCHICH, Yu. S ; MAKOGONENKO, V. N ; ROMANYUK, O. S ; ANDRIICHUK, M. D</creatorcontrib><identifier>ISSN: 0020-1685</identifier><identifier>EISSN: 1608-3172</identifier><identifier>DOI: 10.1023/A:1017599813479</identifier><identifier>CODEN: INOMAF</identifier><language>eng</language><publisher>New York, NY: Springer</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Conductivity phenomena in semiconductors and insulators ; Cross-disciplinary physics: materials science; rheology ; Defects and impurities in crystals; microstructure ; Doping and impurity implantation in iii-v and ii-vi semiconductors ; Electron states ; Electronic transport in condensed matter ; Exact sciences and technology ; Growth from melts; zone melting and refining ; Ii-vi semiconductors ; Impurity and defect levels ; Materials science ; Methods of crystal growth; physics of crystal growth ; Mobility edges ; hopping transport ; Physics ; Structure of solids and liquids; crystallography</subject><ispartof>Inorganic materials, 2001-06, Vol.37 (6), p.556-559</ispartof><rights>2001 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27928,27929</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1043435$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>PARANCHICH, S. Yu</creatorcontrib><creatorcontrib>PARANCHICH, Yu. S</creatorcontrib><creatorcontrib>MAKOGONENKO, V. N</creatorcontrib><creatorcontrib>ROMANYUK, O. S</creatorcontrib><creatorcontrib>ANDRIICHUK, M. D</creatorcontrib><title>Growth and properties of V-doped HgSe crystals</title><title>Inorganic materials</title><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Conductivity phenomena in semiconductors and insulators</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Doping and impurity implantation in iii-v and ii-vi semiconductors</subject><subject>Electron states</subject><subject>Electronic transport in condensed matter</subject><subject>Exact sciences and technology</subject><subject>Growth from melts; zone melting and refining</subject><subject>Ii-vi semiconductors</subject><subject>Impurity and defect levels</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Mobility edges ; hopping transport</subject><subject>Physics</subject><subject>Structure of solids and liquids; crystallography</subject><issn>0020-1685</issn><issn>1608-3172</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNotzEtLAzEUQOEgCo7Vtdss3KbeOzfJZNyVoq1QcOFjW_LUkdoJyYD031uwq4-zOYzdIswRWrpfPCBgp_reIMmuP2MNajCCsGvPWQPQgkBt1CW7qvUbAKQyfcPmqzL-Tl_c7gPPZcyxTEOsfEz8Q4RjBr7-fI3cl0Od7K5es4t0JN6cnLH3p8e35VpsXlbPy8VGZDTtJIiMp2hMQvLaUADpCFEmEwgo2k5rjaA8OdJOkg9gLDlnnVNKQ2qJZuzu_5tt9XaXit37oW5zGX5sOWwRJElS9AeJ60Qh</recordid><startdate>20010601</startdate><enddate>20010601</enddate><creator>PARANCHICH, S. Yu</creator><creator>PARANCHICH, Yu. S</creator><creator>MAKOGONENKO, V. N</creator><creator>ROMANYUK, O. S</creator><creator>ANDRIICHUK, M. D</creator><general>Springer</general><scope>IQODW</scope></search><sort><creationdate>20010601</creationdate><title>Growth and properties of V-doped HgSe crystals</title><author>PARANCHICH, S. Yu ; PARANCHICH, Yu. S ; MAKOGONENKO, V. N ; ROMANYUK, O. S ; ANDRIICHUK, M. D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p182t-338c3e88f13c683d04b3114f8d303ea7666105c3b36b43cd08a3bbabb5560f233</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Conductivity phenomena in semiconductors and insulators</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Doping and impurity implantation in iii-v and ii-vi semiconductors</topic><topic>Electron states</topic><topic>Electronic transport in condensed matter</topic><topic>Exact sciences and technology</topic><topic>Growth from melts; zone melting and refining</topic><topic>Ii-vi semiconductors</topic><topic>Impurity and defect levels</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Mobility edges ; hopping transport</topic><topic>Physics</topic><topic>Structure of solids and liquids; crystallography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>PARANCHICH, S. Yu</creatorcontrib><creatorcontrib>PARANCHICH, Yu. S</creatorcontrib><creatorcontrib>MAKOGONENKO, V. N</creatorcontrib><creatorcontrib>ROMANYUK, O. S</creatorcontrib><creatorcontrib>ANDRIICHUK, M. D</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Inorganic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>PARANCHICH, S. Yu</au><au>PARANCHICH, Yu. S</au><au>MAKOGONENKO, V. N</au><au>ROMANYUK, O. S</au><au>ANDRIICHUK, M. D</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth and properties of V-doped HgSe crystals</atitle><jtitle>Inorganic materials</jtitle><date>2001-06-01</date><risdate>2001</risdate><volume>37</volume><issue>6</issue><spage>556</spage><epage>559</epage><pages>556-559</pages><issn>0020-1685</issn><eissn>1608-3172</eissn><coden>INOMAF</coden><cop>New York, NY</cop><pub>Springer</pub><doi>10.1023/A:1017599813479</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0020-1685 |
| ispartof | Inorganic materials, 2001-06, Vol.37 (6), p.556-559 |
| issn | 0020-1685 1608-3172 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_1043435 |
| source | SpringerNature Journals |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Conductivity phenomena in semiconductors and insulators Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Doping and impurity implantation in iii-v and ii-vi semiconductors Electron states Electronic transport in condensed matter Exact sciences and technology Growth from melts zone melting and refining Ii-vi semiconductors Impurity and defect levels Materials science Methods of crystal growth physics of crystal growth Mobility edges hopping transport Physics Structure of solids and liquids crystallography |
| title | Growth and properties of V-doped HgSe crystals |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T11%3A53%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20and%20properties%20of%20V-doped%20HgSe%20crystals&rft.jtitle=Inorganic%20materials&rft.au=PARANCHICH,%20S.%20Yu&rft.date=2001-06-01&rft.volume=37&rft.issue=6&rft.spage=556&rft.epage=559&rft.pages=556-559&rft.issn=0020-1685&rft.eissn=1608-3172&rft.coden=INOMAF&rft_id=info:doi/10.1023/A:1017599813479&rft_dat=%3Cpascalfrancis%3E1043435%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |