Temperature Dependence of Epitaxial Graphene Formation on SiC(0001)
The formation of epitaxial graphene on SiC(0001) surfaces is studied using atomic force microscopy, Auger electron spectroscopy, electron diffraction, Raman spectroscopy, and electrical measurements. Starting from hydrogen-annealed surfaces, graphene formation by vacuum annealing is observed to begi...
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| Veröffentlicht in: | Journal of electronic materials 2009-06, Vol.38 (6), p.718-724 |
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| container_title | Journal of electronic materials |
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| creator | Luxmi Nie, Shu Fisher, P.J. Feenstra, R.M. Gu, Gong Sun, Yugang |
| description | The formation of epitaxial graphene on SiC(0001) surfaces is studied using atomic force microscopy, Auger electron spectroscopy, electron diffraction, Raman spectroscopy, and electrical measurements. Starting from hydrogen-annealed surfaces, graphene formation by vacuum annealing is observed to begin at about 1150°C, with the overall step-terrace arrangement of the surface being preserved but with significant roughness (pit formation) on the terraces. At higher temperatures near 1250°C, the step morphology changes, with the terraces becoming more compact. At 1350°C and above, the surface morphology changes into relatively large flat terraces separated by step bunches. Features believed to arise from grain boundaries in the graphene are resolved on the terraces, as are fainter features attributed to atoms at the buried graphene/SiC interface. |
| doi_str_mv | 10.1007/s11664-008-0584-3 |
| format | Article |
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(ANL), Argonne, IL (United States)</creatorcontrib><title>Temperature Dependence of Epitaxial Graphene Formation on SiC(0001)</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>The formation of epitaxial graphene on SiC(0001) surfaces is studied using atomic force microscopy, Auger electron spectroscopy, electron diffraction, Raman spectroscopy, and electrical measurements. Starting from hydrogen-annealed surfaces, graphene formation by vacuum annealing is observed to begin at about 1150°C, with the overall step-terrace arrangement of the surface being preserved but with significant roughness (pit formation) on the terraces. At higher temperatures near 1250°C, the step morphology changes, with the terraces becoming more compact. At 1350°C and above, the surface morphology changes into relatively large flat terraces separated by step bunches. 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| subjects | ANNEALING ATOMIC FORCE MICROSCOPY ATOMS AUGER ELECTRON SPECTROSCOPY Characterization and Evaluation of Materials Chemistry and Materials Science ELECTRON DIFFRACTION Electronics and Microelectronics GRAIN BOUNDARIES Instrumentation MATERIALS SCIENCE MORPHOLOGY Optical and Electronic Materials RAMAN SPECTROSCOPY ROUGHNESS Semiconductors Silicon carbide Solid State Physics Spectrum analysis Temperature TEMPERATURE DEPENDENCE |
| title | Temperature Dependence of Epitaxial Graphene Formation on SiC(0001) |
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