Hole transport and photoluminescence in Mg-doped InN

Hole conductivity and photoluminescence (PL) were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined us...

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Veröffentlicht in:	Journal of applied physics 2010-06, Vol.107 (11), p.113712-113712-8
Hauptverfasser:	Miller, N., Ager, J. W., Smith, H. M., Mayer, M. A., Yu, K. M., Haller, E. E., Walukiewicz, W., Schaff, W. J., Gallinat, C., Koblmüller, G., Speck, J. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	BINDING ENERGY CAPACITANCE ELECTRONS FERMI LEVEL HALL EFFECT MATERIALS SCIENCE MOLECULAR BEAM EPITAXY PHOTOLUMINESCENCE TRANSPORT TRAPPING VALENCE WINDOWS
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