Highly mismatched crystalline and amorphous GaN(1-x)As(x) alloys in the whole composition range

Alloying is a commonly accepted method to tailor properties of semiconductor materials for specific applications. Only a limited number of semiconductor alloys can be easily synthesized in the full composition range. Such alloys are, in general, formed of component elements that are well matched in...

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Veröffentlicht in:	Journal of applied physics 2009-08, Vol.106 (10)
Hauptverfasser:	Yu, K. M., Novikov, S. V., Broesler, R., Demchenko, I. N., Denlinger, J. D., Liliental-Weber, Z., Luckert, F., Martin, R. W., Walukiewicz, W., Foxon, C. T.
Format:	Artikel
Sprache:	eng
Schlagworte:	36 ABSORPTION ALLOY SYSTEMS alloying, amorphous semiconductors, conduction bands, electronegativity, energy gap, gallium arsenide, molecular beam epitaxial growth, nitrogen compounds, solar energy conversion, solubility, valence bands ALLOYS ATOMS ELECTRONEGATIVITY ENERGY RANGE MOLECULAR BEAM EPITAXY MORPHOLOGY SEMICONDUCTOR MATERIALS VALENCE
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