Influence of interfaces and doping on the crystallization temperature of Ge–Sb

Influence of interfaces and doping on the crystallization temperature of Ge–Sb

The crystallization temperature Tx of the phase change material Ge–Sb as a function of film thickness and cladding material was measured using time-resolved x-ray diffraction. For films >5 nm, a weak influence of the cladding material on Tx was found (increase for Si, SiN, Pt, SiC, and TiN and de...

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Veröffentlicht in:Applied physics letters 2009-05, Vol.94 (18)
Hauptverfasser: Raoux, Simone, Cheng, Huai-Yu, Jordan-Sweet, Jean L., Muñoz, Becky, Hitzbleck, Martina
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Sprache:eng
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CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CRYSTALLIZATION
INTERFACES
national synchrotron light source
PHASE CHANGE MATERIALS
THICKNESS
THIN FILMS
X-RAY DIFFRACTION
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container_title Applied physics letters
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creator Raoux, Simone
Cheng, Huai-Yu
Jordan-Sweet, Jean L.
Muñoz, Becky
Hitzbleck, Martina
description The crystallization temperature Tx of the phase change material Ge–Sb as a function of film thickness and cladding material was measured using time-resolved x-ray diffraction. For films >5 nm, a weak influence of the cladding material on Tx was found (increase for Si, SiN, Pt, SiC, and TiN and decrease for Al and W). For very thin films, however, Tx differed up to 200 °C. Doping of Ge–Sb with these materials led to an increase in Tx in all cases, up to a maximum of 180 °C for SiN. Such a large influence of interfaces and doping on Tx is of great technological importance.
doi_str_mv 10.1063/1.3133344
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subjects CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CRYSTALLIZATION
INTERFACES
national synchrotron light source
PHASE CHANGE MATERIALS
THICKNESS
THIN FILMS
X-RAY DIFFRACTION
title Influence of interfaces and doping on the crystallization temperature of Ge–Sb
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